Applied Materials, Inc.

Tai T Ngo

Joseph Yudovsky

Kevin Griffin

Ning Li

Steven D Marcus

Kenneth S Collins

John C Forster

Garry K Kwong

Ren Liu

Arnold Kholodenko

Jun Zhao

Maitreyee Mahajani

Salvador P Umotoy

Vinay K Shah

Steve G Ghanayem

Leon Volfovski

Gopalakrishna B Prabhu

Semyon Sherstinsky

Yong Liu

Anh Ngoc Nguyen

Talex Sajoto

Zhiyong Li

Jeffrey S Sullivan

Leonid Selyutin

Yacov Elgar

Calvin R Augason

Leonel Arturo Zuniga

Dhruv Gajaria

Michael Marriott

John Visitacion

Peter Crundwell

Ho Gene Choi

Dennis C Pierce

Anne-Douce M P Coulin

Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Gas separation control in spatial atomic layer deposition

A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Elongated capacitively coupled plasma source for high temperature low pressure environments

Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.

Atomic layer deposition chamber with multi inject

The present invention generally relates to an edge deletion module positioned within an automated solar cell fabrication line. The edge deletion module may include a grinding wheel device for removing material from edge regions of a solar cell device and cleaning the edge regions of the solar cell device after removing the material. The edge deletion module may also include an abrasive element, a portion of which is ground as it is periodically, laterally advanced toward the grinding wheel device. A controller is provided for controlling the operation and function of various facets of the module.

Solar panel edge deletion module

In a first aspect, an apparatus is provided for forming a scrubber brush assembly. The apparatus includes a mandrel adapted to be inserted into a scrubber brush so as to form a scrubber brush assembly, the mandrel having: a first end; a second end; and one or more position guides adjacent at least one of the first and second ends and adapted to position a scrubber brush on the mandrel. Numerous other aspects are provided.

Methods and apparatus for installing a scrubber brush on a mandrel

A support member for supporting a substrate in a process chamber, the support member having a substrate support surface with one or more isolated recessed areas. A vacuum channel and a gas channel are formed in the support member along a common plane and are coupled to a vacuum source and gas source respectively. The gas channel comprises two or more concentrically disposed annular gas channels encompassing the vacuum channel. The vacuum channel is coupled to the support surface, and in particular to the one or more recessed areas, by a plurality of conduits. A portion of the conduits is disposed diametrically exterior to at least one of the annular gas channels and communicates with the vacuum channel via bypass channels.

Substrate support member for a processing chamber

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Dublin, CA, United States of America

Tai T Ngo