Taiwan Semiconductor Manufacturing Comp. Ltd.

Tai Min Chang

Lin-Yu Huang

Ming-Hsing Tsai

Wei-Yip Loh

Chih-wei Chang

Yan-Ming Tsai

Hong-Mao Lee

Chien Chang

Kan-Ju Lin

Yi-Ning Tai

Harry Chien

Chih-Shiun Chou

A semiconductor structure and method of forming a semiconductor structure are provided. In some embodiments, the method includes forming a gate structure over a substrate. An epitaxial source/drain region is formed adjacent to the gate structure. A dielectric layer is formed over the epitaxial source/drain region. An opening is formed, the opening extending through the dielectric layer and exposing the epitaxial source/drain region. Sidewalls of the opening are defined by the dielectric layer and a bottom of the opening is defined by the epitaxial source/drain region. A silicide layer is formed on the epitaxial source/drain region. A metal capping layer including tungsten, molybdenum, or a combination thereof is selectively formed on the silicide layer by a first deposition process. The opening is filled with a first conductive material in a bottom-up manner from the metal capping layer by a second deposition process different from the first deposition process.

Semiconductor device structure and method for forming the same

Growing community of inventors

Taipei, Taiwan

Tai Min Chang