Samsung Electronics Co., Ltd.

Tai-Kyung Kim

Jae-Jun Kim

Jae-Moon Lee

Binna Kim

Hyeong-Ju Seo

Yun-Ho Yang

Young-Tae Kim

Keun-Ho Lee

Young-Nam Hwang

Won-Young Chung

Ji-Young Shin

Sung-Jae Lee

Yoon-jung Choi

Ui-hui Kwon

Kwang-Ho Cha

Won-young Chung

Sung-Hoon Cheung

Byung-Kook Baek

Seung-Ki Chae

Gyeong-Su Keum

Gyeong-su Keum

Jai-hyung Won

Young-kwan Park

Oven

Induction range

Tray supporter for oven

Door for oven

Microwave oven

Electric oven

In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Phase-change memory device and method of manufacturing the same

A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.

Filament member, ion source, and ion implantation apparatus

Gas oven range

The present invention can provide ion implanter devices including an arc chamber including at least a first inner region and a second inner region, an electron emitting device disposed in the arc chamber adjacent the first inner region and adapted to emit electrons, an electron returning device disposed in the arc chamber adjacent the second inner region and adapted to return at least some of the electrons emitted from the electron emitting device into the second inner region; and an electric field and magnetic field generating device adapted to provide a magnetic field to the arc chamber, wherein at least one inner wall of the arc chamber has a convex surface.

Ion implanters having an arc chamber that affects ion current density

A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

Phase change memory devices including memory elements having variable cross-sectional areas

Growing community of inventors

Seoul, South Korea

Tai-Kyung Kim