Taiwan Semiconductor Manufacturing Comp. Ltd.

Tai-Kun Kao

Tsung-Min Lin

Jen-Chung Chiu

Ching-Heng Yen

Lu-Hsun Lin

Sheng-Tai Peng

Po-Tang Tseng

Jui-Chun Weng

Ren-Dou Lee

Chen-Chung Li

Chi-Chieh Wang

Kuo-I Huang

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

Adjustable support for arc chamber of ion source

The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

Repellent electrode for electron repelling

Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.

Ion generator and method for using the same

A method for generating an ion beam in an ion implantation process is provided. The method includes supplying a working gas into a first portion of an arc chamber which is separated from a second portion of the arc chamber by an intermediate plate. The method further includes guiding the working gas into the second portion of the arc chamber via a plurality of gas outlets formed at two opposite edges of the intermediate plate. The method also includes generating an ion beam from the working gas in the second portion of the arc chamber.

Method and apparatus for supplying ion beam in ion implantation process

An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius R; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Rof a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Rand Rexceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

Ion implanter and method of preventing undesirable ions from implanting a target wafer

A method for aligning an extraction electrode to an arc chamber of an ion implantation apparatus can be carried out by first providing a calibration tool that is shaped essentially of a flat key that has sections of different widths. The extraction electrode can then be tilted by switching on a tilt motor, while being moved horizontally by switching on an alignment motor until the calibration tool can be smoothly inserted into the slit openings in the arc chamber and in the extraction electrode. The tilt motor and the alignment motor are controlled by a tilt/align controller. When such insertion is not possible, the extraction electrode can be continuously tilted and moved horizontally until such smooth insertion is possible. The present invention further discloses a calibration tool that can be used easily for aligning an extraction electrode to an arc chamber of an ion implantation apparatus.

Growing community of inventors

Hsinchu, Taiwan

Tai-Kun Kao