Delta Electronics, Inc.

National Central University

Tai-Kang Shing

Huang-Kun Chen

Hsieh-Shen Hsieh

Horng-Jou Wang

Cheng-Chang Lee

Chao-Jui Liang

Heng-Chung Chang

Zong-Ting Yuan

Jen-Inn Chyi

Hsin-Chang Tsai

Ching-Chuan Shiue

Hsueh-Kuo Liao

Geng-Yen Lee

Chuan-Wei Wang

Chih-Ming Sun

Wei-Leun Fang

Shiang-Cheng Lu

Wei-Kai Shen

Chao-Qing Wang

Chia-Yi Chu

A semiconductor device including a substrate, a heterojunction body, a passivation layer, a source contact, a drain contact, and a gate contact. The heterojunction body disposed on or above the substrate includes a first semiconductor layer, a mask layer, a regrowth layer, and a second semiconductor layer. The first semiconductor layer is disposed on or above the substrate. The mask layer is disposed on or above a portion of the first semiconductor layer. The regrowth layer disposed on the first semiconductor layer and adjacent to the mask layer includes a main portion and at least one inclined portion. The second semiconductor layer is disposed on the mask layer and the regrowth layer. The passivation layer is disposed on the second semiconductor layer. The gate contact is disposed on the passivation layer, between the source contact and the drain contact, and at least above the inclined portion of the regrowth layer.

Semiconductor device and manufacturing method thereof

A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.

Micro-electromechanical device and manufacturing method thereof

A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.

Capacitance sensing structure

A chip package mechanism. A substrate is disposed in a receiving chamber of a base. A chip is disposed on a target surface of the substrate. A plurality of supporting elements is disposed on the target surface and surrounds the chip. A gap for receiving the chip is created in the receiving chamber and between the target surface and the base by means of the supporting elements. A barricade is disposed in the gap to separate glue filled in the receiving chamber from contacting the chip. Outside water and particles cannot enter the chip package mechanism. The chip thus has a prolonged lifespan after packaged in the chip package mechanism.

Chip package mechanism

A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Semiconductor piezoresistive sensor and operation method thereof

An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.

Accelerometer

Growing community of inventors

Taoyuan Hsien, Taiwan

Tai-Kang Shing