Taiwan Semiconductor Manufacturing Comp. Ltd.

Tai-Chung Huang

Tze-Liang Lee

Chih-Tang Peng

Hao-Ming Lien

An isolation region gap fill method comprises depositing a first dielectric material over a semiconductor device through a flowable deposition process or other gap fill deposition processes, wherein the semiconductor device includes a first FinFET comprising a plurality of first fins and a second FinFET comprising a plurality of second fins. The method further comprises removing the first dielectric material between the first FinFET and the second FinFET to form an inter-device gap, depositing a second dielectric material into the inter-device gap and applying an annealing process to the semiconductor device.

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Hsin-Chu, Taiwan

Tai-Chung Huang