Taiwan Semiconductor Manufacturing Comp. Ltd.

Tai-Chun Lin

Kuan-Chi Tsai

Chih-Ho Tai

Wen-Tsao Chen

Ming-Ray Mao

Disclosed embodiments include a capacitor structure and a method for forming a capacitor structure. An embodiment is a structure comprising a conductor-insulator-conductor capacitor on a substrate. The conductor-insulator-conductor capacitor comprises a first conductor on the substrate, a dielectric stack over the first conductor, and a second conductor over the dielectric stack. The dielectric stack comprises a first nitride layer, a first oxide layer over the first nitride layer, and a second nitride layer over the first oxide layer. A further embodiment is a method comprising forming a first conductor on a substrate; forming a first nitride layer over the first conductor; treating the first nitride layer with a first nitrous oxide (NO) treatment to form an oxide layer on the first nitride layer; forming a second nitride layer over the oxide layer; and forming a second conductor over the second nitride layer.

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Tainan, Taiwan

Tai-Chun Lin