Vanguard International Semiconductor Corporation

Tai-Bor Wu

Wong-Cheng Shih

Lan Lin Chao

Chich-Shang Chang

A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.

Growing community of inventors

Hsin-Chu, Taiwan

Tai-Bor Wu