Macronix International Co., Ltd.

Tahui Wang

Chih Chieh Yeh

Chih Yuan Lu

Shao Hong Ku

Yin Jen Chen

Wenpin Lu

Shaw Hung Ku

A multi-bit memory cell includes a substrate; a multi-bit charge-trapping cell over the substrate, the multi-bit charge-trapping cell having a first lateral side and a second lateral side; a source region in the substrate, a portion of the source region being under the first side of the multi-bit charge-trapping cell; a drain region in the substrate, a portion of the drain region being under the second side of the multi-bit charge-trapping cell; and a channel region in the substrate between the source region and the drain region. The channel region has one of a p-type doping and an n-type doping, and the doping is configured to provide a highest doping concentration near the central portion of the channel region.

Nonvolatile memory device and method of forming the same

Methods and apparatuses for causing electroluminescence with charge trapping structures are disclosed. Various embodiments relate to methods and apparatuses for causing electroluminescence with charge carriers of one type provided to the charge trapping structure by a forward biased p-n structure or a reverse biased p-n structure.

Method and apparatus for electroluminescence

Growing community of inventors

Hsinchu, Taiwan

Tahui Wang