Robert Boschgmbh

Taha Ibrahim Ibrahim Soliman

Andre Guntoro

Norbert Wehn

Tobias Kirchner

Leonardo Luiz Ecco

Christian Weis

Chirag Sudarshan

A processor for performing a predetermined computational operation in which one or multiple data element(s) is/are used to determine a result. The processor includes one or more processor core(s) and at least one buffer memory, connectable to a main memory, and if the main memory is connected, it is designed to access the main memory. Each processor core is designed to execute instructions. The at least one buffer memory includes a calculation circuit which is designed to perform the computational operation in response to an execution signal if the one or the multiple data element(s) is/are stored in the buffer memory, the result being stored in the buffer memory. The processor is designed to perform the computational operation optionally using one of the processor cores with the aid of the instructions or to perform it in the at least one buffer memory using the respective calculation circuit.

Processor for performing a predetermined computational operation, and processing unit

An apparatus including a first comparator device. The first comparator device includes a first reference current providing device for providing a first reference current and a first comparison current providing device for providing a first comparison current. The first comparator device is configured to compare the first reference current with the first comparison current to obtain a first comparison result and output a first output signal characterizing the first comparison result based on the first comparison result.

Apparatus comprising a comparator device and method for operating an apparatus comprising a comparator device

A memory device comprising a plurality of memory cells situated in a first cell field, multiple first bit lines, each respectively connected to multiple memory cells of the first cell field to enable access to the memory cells via the bit line, and multiple sense amplifier pairs which respectively comprise a first and a second sense amplifier. Each first bit line is assigned to a sense amplifier pair, each first bit line being connected to a respective first semiconductor switch element, through which the bit line is electroconductively connectible to and insulatable from the first sense amplifier of the sense amplifier pair, to which the bit line is assigned. Each first bit line is connected to a respective second semiconductor switch element, through which the bit line is electroconductively connectible to and insulatable from the second sense amplifier of the sense amplifier pair, to which the bit line is assigned.

Memory device and method for performing consecutive memory accesses

A memory device comprising a cell field having memory cells, N bit lines, which are respectively connected to at least one of the memory cells of the cell field, N being a whole number greater than one, N sense amplifiers; a bit shift circuit, which has S switch element rows, S being a whole number greater than one and a row number in the range from zero to S−1 being assignable to each switch element row. Each switch element row includes at least one semiconductor switch element connected to one of the bit lines and one of the sense amplifiers. Switch elements of each row connect all bit lines, whose bit line number is smaller than or equal to N minus the row number, to sense amplifiers, so that the respective sense amplifier number is equal to the respective bit line number plus the row number.

Growing community of inventors

Renningen, Germany

Taha Ibrahim Ibrahim Soliman