Electronics and Telecommunications Research Institute

Intellectual Discovery Co., Ltd.

Taeyoub Kim

Gun Yong Sung

Jong-Heon Yang

Chang-Geun Ahn

Ansoon Kim

Chan Woo Park

Jae Bon Koo

Chil Seong Ah

In-Kyu You

Seon-Hee Park

In Bok Baek

Minseok Kim

Seon Hee Park

Han Young Yu

Yong Suk Yang

Soon-Won Jung

Gun-Yong Sung

Su Jae Lee

Moon-Gyu Jang

Kang-Jun Baeg

Nae Man Park

Chan-Woo Park

In-Bok Baek

Han-Young Yu

Chil-Seong Ah

HyeKyoung Yang

A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.

Flexible flat cable and manufacturing method thereof

Provided is an offset printer configured to increase or maximize productivity and yield. The offset printer includes a printing roller, a coating unit configured to apply a printing substance to the printing roller, a patterning unit configured to pattern the printing substance applied to the printing roller from the coating unit, a printing unit configured to transfer the patterned printing substance to a printing medium, and a cleaning unit configured to clean the printing substance remaining on the printing roller by a dry cleaning method.

Offset printer

Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

Method and apparatus for measuring isoelectric point using field effect transistor

Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.

Apparatus and method for detecting biomolecules

Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part.

Bio-sensor chip for detecting target material

A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.

Silicon-based light emitting diode

Growing community of inventors

Seoul, South Korea

Taeyoub Kim