Lg Innotek Co., Ltd.

Profund Advisors LLC

TaeYong Lee

Sangjun Lee

Taejin Kim

William E Seale

Minsuk Kim

BumDoo Park

YeongUn Seong

KiYong Hong

SonKyo Hwang

Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance.

Light emitting device with metal electrode layer having protrusion portions

Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe.

Light emitting device having an ohmic layer with a plurality of protruding contact portions

A computer implemented method, system, and software for calculating and using an intraday indicative value of a leveraged Bullish or Bearish exchange traded fund ('ETF') for arbitrage purposes, includes calculating an intraday current value of all the equity securities in the ETF (applicable only to Bullish ETFs), calculating mark to market gains or losses of at least one derivative product, and retrieving an accumulated loss or gain of the at least one derivative product and other cash equivalent amounts. The intraday indicative value of the ETF is determined by combining the calculated intraday current value of all the equity securities (applicable only to Bullish ETFs), the accumulated loss or gain, the mark to market gains of the at least one derivative product and other cash equivalent amounts. The determined intraday value of the ETF is used, by a party, for arbitrage purposes.

Method and system for managing exchange traded funds using an intraday indicative value

A computer system is provided. The computer system includes a computing processor configured to process data for share creation and redemption and near-real time share valuation for an Exchange Traded Fund ('ETF') that invests in at least one derivative product. The computing processor is also configured to create an intraday indicative value ('IIV') file for the ETF based on the data processed, the IIV file including an accumulated change in value of the at least one derivative product in which the ETF invests. The accumulated value includes a gain or loss of the at least one derivative product during a previous trading day. The computer system further includes a publication processor configured to publish the IIV file to an authorized participant such that the authorized participant can utilize the IIV file to calculate an intraday indicative value of the ETF.

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Seoul, South Korea

TaeYong Lee