Samsung Electronics Co., Ltd.

Seoul National University

Taeyon Lee

Beomsuk Lee

Kwansik Kim

Gwideokryan Lee

Sangchun Park

Gwi-Deok Ryan Lee

Gwideok Ryan Lee

Sangsu Park

Myungwon Lee

Changhwa Kim

Sang-Su Park

Myunglae Chu

Yoondong Park

Jung-Kyu Jung

HyunSeok Lee

Seungjun Lee

Tae-Woo Lee

Seon-Jeong Lim

Min-Ho Kim

Younggu Jin

Dongchan Kim

Minwoong Seo

Kwang-Min Lee

Masaru Ishii

Hongki Kim

Dongmo Im

Taechan Kim

Min-Jun Choi

Hajin Lim

Taeseok Oh

Seokjin Kwon

Yoonkyoung Kim

Jungchak Ahn

SangChul Sul

Jaehoon Jeon

Seung Hyeon Jo

KwangHyun Lee

An image sensor includes a plurality of pixels including a blue pixel, a green pixel, and a red pixel. At least a portion of the plurality of pixels includes a first photo-sensing device including a first perovskite which absorbs at least a portion of light in a visible light wavelength spectrum, and a second photo-sensing device which is stacked with the first photo-sensing device and senses at least a portion of light in an infrared wavelength spectrum.

Image sensor and camera and electronic device

An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

Image sensor and method of manufacturing same

An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX, ABX, ABX, ABX, ABX, or ABX, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

Hybrid image sensors having optical and short-wave infrared pixels integrated therein

An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

Image sensor including transfer transistor having channel pattern on interlayered insulating layer over substrate and method of fabricating an image sensor

An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

Image sensors having lower electrode structures below an organic photoelectric conversion layer

A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.

Pixel array and image sensor including the same

An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

Image sensor

An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

Image sensor with photoelectric part and transfer gate on opposite sides of the substrate

A pixel array includes a plurality of pixels. Each of the pixels includes a photoelectric element formed on a substrate and that generates charge from light, and a pixel circuit formed between the photoelectric element and the substrate and that outputs a digital signal value based on an amount of the generated charge. The pixel circuit includes a floating diffusion formed in the substrate and that stores the charge therein, a vertical pixel electrode that connects the floating diffusion to the photoelectric element and extends in a direction perpendicular to the substrate, an analog-to-digital converter that converts an electric potential of the floating diffusion into the digital signal value, and a memory element that stores the digital signal value.

Pixel array and image sensor

An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.

Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

Semiconductor devices

An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

Image sensors

An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.

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Seoul, South Korea

Taeyon Lee