Samsung Electronics Co., Ltd.

Taewoong Koo

Jihye Son

Hyo-Seok Kim

Hojoong Kim

Bongsik Choi

Taeha Suh

A semiconductor device includes a substrate including a first active pattern having first and second source/drain regions of a cell region, a device isolation layer in a trench defining the first active pattern on the cell region, a buffer layer on the cell region, a line structure extends in a third direction, extends from the cell region to a boundary region, and including a first conductive pattern that passes through the buffer layer and contacts the first source/drain region, a bit line on the first conductive pattern, and a first barrier pattern between the bit line and the first conductive pattern, a pair of spacers respectively on both sidewalls of the line structure, a contact on the second source/drain region, a landing pad on the contact, a first abrasive particle between the contact and the landing pad, and a data storage element on the landing pad.

Growing community of inventors

Suwon-si, South Korea

Taewoong Koo