Samsung Display Co., Ltd.

Taewook Kang

Keunwoo Kim

Wooyong Sung

Hyuneok Shin

Hoon Jong Kang

Ji-Hyun Kim

Shinil Choi

Hyunah Sung

Jaehwan Chu

Joongeol Lee

Kyeongsu Ko

Byungsoo So

Kiyong Lee

Yung Bin Chung

Dokyeong Lee

Yu-Gwang Jeong

Jaesik Kim

Duckjung Lee

Sanggab Kim

Dongmin Lee

Jeongmin Park

Dokeun Song

Sangsub Kim

Heekyun Shin

Woojin Cho

Sungsoon Im

Gyungmin Baek

Saehee Han

Sukyoung Yang

Gwangmin Cha

Jinsu Byun

Hanbit Kim

Doo-Na Kim

Seungjun Moon

Jaeseob Lee

Yunjung Oh

Doona Kim

Bummo Sung

Jihyun Kim

Seungyong Song

Taesung Kim

Taehoon Yang

Mugyeom Kim

Joonyong Park

Hyunmin Cho

Changhee Lee

Shin Il Choi

Woongsik Kim

Jaewoo Jeong

Youngmin Moon

Yongsu Lee

Byung Soo So

Minho Moon

Juhyun Lee

Yunjong Yeo

Youngdae Kim

Youngseo Choi

Kyu Hwan Hwang

Hyeyong Chu

Jongoh Seo

Changyong Jeong

Jeongseok Lee

Meejae Kang

Changmok Kim

Jiyeong Shin

Taegyun Kim

Yonghyuck Lee

Soonchul Chang

Jinwook Seo

Wooseok Jeon

Sanghyun Yun

Jinho Kwack

Hyena Kwak

Daewon Choi

Hyunju Kang

Jonghan Jeong

Janghyun Kim

Seihwan Jung

Byoungkeon Park

Samtae Jeong

Jin-su Byun

Daebeom Shin

Sungjoo Kwon

Heejun Kwak

A display panel according to an embodiment includes a substrate, a thin film transistor disposed on the substrate, and a light emitting element electrically connected to the thin film transistor. The substrate includes a first resin layer, a first barrier layer disposed on the first resin layer, a second resin layer including a lower portion disposed on the first barrier layer and an upper portion having a carbon content less than a carbon content of the lower portion, and a second barrier layer disposed on the second resin layer.

Display panel including substrate including resin layer having upper surface modified by a plasma treatment

A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

Display device and method of manufacturing the same

A display apparatus includes: a light emitting element; a driving switching element to apply a driving current to the light emitting element; and a first compensation switching element and a second compensation switching element connected in series to each other between a control electrode of the driving switching element and an output electrode of the driving switching element. A control electrode of the first compensation switching element and a control electrode of the second compensation switching element are to receive a compensation gate signal, and a falling waveform of the compensation gate signal and a rising waveform of the compensation gate signal are asymmetrical to each other.

Display apparatus and method of driving the same

A display device includes: a first inorganic insulating layer; a wiring disposed on the first inorganic insulating layer; a second inorganic insulating layer covering the wiring; and a display element disposed on the second inorganic insulating layer, wherein the wiring includes a lower layer including at least one of aluminum and an aluminum alloy, an upper layer disposed on the lower layer and including at least one of titanium and titanium oxide, and an intermediate layer disposed between the lower layer and the upper layer and including titanium aluminide.

A display device includes a substrate including a sub-pixel area, an active layer disposed in the sub-pixel area and including first to third regions, a first channel region between the first and second regions, and a second channel region between the second and third regions, a first gate electrode disposed in the first and second channel regions, and constituting a dual gate transistor together with the first and second regions, the first channel region, the second and third regions, and the second channel region, a first gate insulating layer disposed between the active layer and the first gate electrode, and defining an opening exposing the second region, an insulating pattern in the opening, a gate electrode pattern contacting a top surface of the insulating pattern, and is spaced apart from the first gate electrode, and a light emitting structure on the dual gate transistor and the gate electrode pattern.

Display device and method of manufacturing display device

A display device includes a base substrate, a buffer layer disposed on the base substrate, an active layer disposed on the buffer layer, a first gate insulation layer disposed on the active layer, a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy, a second gate insulation layer disposed on the first conductive layer, a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy, an insulation interlayer disposed on the second conductive layer, and a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer.

Method of manufacturing display device including third conductive layer connected to active layer and directly contacts first conductive layer

A display apparatus includes a first sub-pixel electrode, a metal bank layer in which a first opening overlapping the first sub-pixel electrode is defined, the metal bank layer including a first metal layer and a second metal layer on the first metal layer, an insulating layer between an outer portion of the first sub-pixel electrode and the metal bank layer, a first intermediate layer overlapping the first sub-pixel electrode through the first opening of the metal bank layer, a first opposite electrode disposed on the first intermediate layer through the first opening of the metal bank layer, and a low-reflective layer disposed on the second metal layer of the metal bank layer and having a reflectivity less than a reflectivity of the second metal layer.

Display apparatus and method of manufacturing the same

A method of manufacturing a display panel includes providing an insulating substrate that includes a hole area, a display area that surrounds the hole area, and a peripheral area adjacent to the display area, forming a semiconductor pattern in the display area, forming an insulating layer, forming contact holes in the insulating layer that expose portions of the semiconductor pattern, and forming a module hole by etching a portion of the insulating layer and a portion of the insulating substrate that overlap the hole area.

Method of manufacturing display panel and display apparatus including the display panel

A pixel includes an organic light-emitting diode, a driving transistor, a first dual gate transistor, a first capacitor, and a compensation transistor. The organic light-emitting diode includes first and second terminals. The driving transistor generates the driving current and includes a first terminal to which a first power supply voltage is applied, a second terminal connected to the first terminal of the organic light-emitting diode, and a gate terminal. The first dual gate transistor is connected between the gate terminal of the driving transistor and the second terminal of the driving transistor and includes first and second sub-transistors. The first capacitor includes a first electrode to which the first power supply voltage is applied, and a second electrode connected to a first node that connects the first and second sub-transistors to each other. The compensation transistor includes a terminal connected between the second electrode and the first node.

Pixel, display device, and method of driving display device

A display device including a plurality of pixels over a substrate, the display device includes: a pixel-defining layer covering edges of a first electrode of each of the plurality of pixels; a first spacer arranged on the pixel-defining layer and including a first portion and a second portion, the first portion of the first spacer having a width increasing toward the substrate, and the second portion of the first spacer being arranged between the first portion of the first spacer and the substrate and having a width decreasing toward the substrate; and a first hole arranged apart from the first electrode between the plurality of pixels, the first hole being formed in the second portion of the first spacer and the pixel-defining layer.

A display panel including a glass substrate having an opening area, and a display area at least partially surrounding the opening area; a thin film transistor on the display area including a semiconductor layer and a gate electrode; a display element electrically connected to the thin film transistor; a multi-layer including an insulating layer and a lower insulating layer. The insulating layer is between the glass substrate and the display element and the lower insulating layer is between the glass substrate and the insulating layer; and a thin-film encapsulation layer covering the display element including an inorganic encapsulation layer and an organic encapsulation layer. The multi-layer includes a first groove between the opening area and the display area. A first width of a portion of the first groove in the lower insulating layer is greater than a second width of a portion of the first groove in the insulating layer.

Display panel, and display device including the same

A display device including a display area and a non-display area further includes a base layer including a first surface and a second surface opposite to the first surface, the base layer having, in the non-display area, an opening portion penetrating the first surface and the second surface; a pad unit including a terminal on the first surface, the pad unit extending from the first surface to the opening portion; a connection line connected to the terminal on the first surface, the connection line extending from the non-display area to the display area; an insulating layer covering the terminal and the connection line; a thin-film transistor including a semiconductor layer on the insulating layer, the thin-film transistor being connected to the connection line; and a display element connected to the thin-film transistor, the display element being in the display area.

Display device and method of manufacturing the display device

An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.

Organic light-emitting display apparatus and method of manufacturing the same

Display device including third conductive layer directly contacting first conductive layer and second conductive layer

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Yongin-si, South Korea

Taewook Kang