Samsung Electronics Co., Ltd.

Kumoh National Institute of Technology Industry-academic Cooperation Foundation

Taewon Jeong

Giyoung Jo

Hyeon Cheol Park

Doh Won Jung

Daejin Yang

Chan Kwak

Shanghyeun Park

Hyunjoon Kim

Deukseok Chung

Changsoo Lee

Ilhwan Kim

Euncheol Do

Yongchul Kim

Bonwon Koo

Donggu Lee

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

Dielectric material, device including the same, and method of preparing the dielectric material

A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

Sintering jig

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1&#x2212;)KNaNbOM(ASb)O&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the same

A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

Relaxor-ferroelectric material and method of synthesizing the same and device including relaxor-ferroelectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:AB.(1&#x2212;)(BiNa)TiO&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the dielectric material

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.

Electro-chromic panel capable of selectively making transparent area and reflective area and method of operating the same, and display apparatus including the same and method of operating display apparatus

A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.

Growing community of inventors

Yongin-si, South Korea

Taewon Jeong