Samsung Electronics Co., Ltd.

Taeseok Oh

Kwang Soo Kim

Dong-wook Kim

Min-Ho Kim

Younggu Jin

Sangyun Lee

Taeyon Lee

Sunghyup Kim

Taejoong Kim

Doowon Kwon

Seung-hun Shin

Taechan Kim

Youngduk Kim

Junetaeg Lee

Yongsuk Choi

Byeonghwan Jeon

Gwideokryan Lee

Myungwon Lee

JungHwan Um

Jaesang Yoo

SangChul Sul

Yong-Ho Choi

KwangHyun Lee

Sungmoon Park

A ring assembly and a chuck assembly therewith are provided. The ring assembly may include an edge ring that is provided to enclose a chuck body supporting a substrate. The edge ring may include a first top surface, a second top surface positioned outside the first top surface and above the first top surface, a first inner side surface connecting the first top surface to the second top surface, and at least one first flow hole extending outward from one of the first top surface and the first inner side surface, thereby penetrating the edge ring.

Ring assembly and chuck assembly having the same

An optical inspection apparatus includes an inspection target unit on which an inspection target is loaded, an illumination optical unit configured to irradiate incident light to the inspection target, an objective lens unit disposed between the illumination optical unit and the inspection target unit, a detection optical unit configured to receive reflective light reflected from the inspection target to thereby detect a presence or absence of a defect on the inspection target, and a control unit configured to control the illumination optical unit and the detection optical unit. The illumination optical unit includes a light source part configured to irradiate the incident light, and a spatial filter array configured to modify a transmission region of the incident light irradiated from the light source part. The spatial filter array includes a spatial filter part, and a filter movement part configured to move the spatial filter part.

Optical inspection apparatus, a method of inspecting a substrate, and a method of treating a substrate

A semiconductor device includes a substrate, a circuit layer formed on a first surface of the substrate and including a via pad and an interlayer insulating layer covering the via pad, a via structure configured to fully pass through the substrate, partially pass through the interlayer insulating layer and be in contact with the via pad, a via isolation insulating layer configured to pass through the substrate and be spaced apart from outer side surfaces of the via structure in a horizontal direction and a pad structure buried in the substrate and exposed on a second surface of the substrate opposite the first surface of the substrate.

Semiconductor devices having a pad structure

An image sensor includes a pixel array chip, a logic chip, and an interposed layer. The interposed layer is disposed on the pixel array chip. The logic chip is disposed on the interposed layer. The interposed layer includes a connecting part, a shielding part, and a metal-diffusion barrier layer. The connecting part electrically connects a first interconnection wire of the pixel array chip and a second interconnection wire of the logic chip. The connecting part includes a first metallic element. The shielding part is disposed spatially apart from the connecting part and electrically grounded to suppress an electrical coupling between the pixel array chip and the logic chip. The shielding part includes a second metallic element. The metal-diffusion barrier layer is disposed on top and bottom surfaces of the interposed layer to limit diffusion of electrical charges to the pixel array chip and the logic chip.

Image sensor

A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

Binary image sensors including quantum dots and unit pixels thereof

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Seoul, South Korea

Taeseok Oh