Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Yonsei University

Taesang Kim

Myounghwa Kim

Joonseok Park

Yeonkeon Moon

Junhyung Lim

Eoksu Kim

Sangwoo Sohn

Geunchul Park

Hyelim Choi

Kyoungseok Son

Masataka Kano

Kyungjin Jeon

Sangyoon Lee

Hyungjun Kim

Jaybum Kim

Jihun Lim

Soyoung Koo

Seryeong Kim

Jangyeon Kwon

Kyungseok Son

Jisim Jung

Jun Hyung Lim

Youngsoo Park

Changjung Kim

Myungkwan Ryu

Kwang-suk Kim

Seongho Cho

Joon Seok Park

Yeon Keon Moon

Hyun Jae Kim

Eok Su Kim

Sangwon Shin

Jongbaek Seon

Joon-seok Park

Byungwook Yoo

Min Seong Kim

Jun-Hyung Lim

Kyungbae Park

Jongdo Keum

Seokjun Seo

Yeon-keon Moon

Hyunjae Kim

Youngjun Tak

A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.

Display apparatus and method of manufacturing the same

A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

Thin film transistor and display device including the same

A scan driving circuit includes multiple stages. A j-th stage of the stages includes a buffer part electrically connected to an output terminal that operates in response to a potential of a first control node, a holding part electrically connected to the output terminal that operates in response to a potential of a second control node, and an inverter part electrically connected to the first and second control nodes that controls the potentials of the first and second nodes. The inverter part includes a control transistor including a gate electrically connected to the first control node, and a drain electrically connected to a first voltage terminal that receives a first low voltage or a second voltage terminal that receives a second low voltage. The control transistor includes a dummy gate that receives a low voltage lower than or equal to the first and second low voltages.

Scan driving circuit and display device having the same

A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

Display panel and method of fabricating the same

A display device includes a base substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, first to third thin film transistors on the base substrate and including first to third active patterns, respectively, first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively and in the first to third sub-pixel areas, respectively, a blue light emitting layer on the first to third pixel electrodes and configured to emit a blue light, a first color conversion pattern in the first sub-pixel area on the blue light emitting layer, a second color conversion pattern in the second sub-pixel area on the blue light emitting layer, and a red color filter layer between the blue light emitting layer and the first to third active patterns.

Display device

A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

Transistor substrate and display device comprising same

A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

Semiconductor device including two thin-film transistors and method of fabricating the same

A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

Display device and method of manufacturing the same

A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

Transistor and display device including the same

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.

Display apparatus

A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

Thin-film transistor substrate and display apparatus comprising the same

A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.

Thin film transistor, display panel having the same, and method of manufacturing the display panel

Growing community of inventors

Seoul, South Korea

Taesang Kim