Applied Materials, Inc.

Applied Technology, Inc.

Taekyung Won

Kam S Law

Quanyuan Shang

Takako Takehara

Dan Maydan

William Reid Harshbarger

Robert M Robertson

Sheng Sun

A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond&#x2122; layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Plasma display panel with a low K dielectric layer

A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond&trade; layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

Plasma display panel with a low k dielectric layer

A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.

Annealing an amorphous film using microwave energy

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San Jose, CA, United States of America

Taekyung Won