Samsung Sdi Co., Inc.

Taeksoo Kwak

Jin-Hee Bae

Kunbae Noh

Jinwoo Seo

Huichan Yun

Junyoung Jang

Jingyo Kim

Jun Sakong

Byeonggyu Hwang

Jiho Lee

Seungwoo Jang

Sooyeon Sim

Yonggoog Kim

Byeong Gyu Hwang

Kwen-Woo Han

Yoong Hee Na

Haneul Kim

Wanhee Lim

Woo Han Kim

Chungheon Lee

Euihyun Kim

Eunseon Lee

Yoonyoung Koo

Hyeonsu Jo

Myungho Kang

Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H), silane gas (SiH), and ammonia gas (NH), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))≥1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Composition for forming silica layer and silica layer

Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Composition for forming silica layer, manufacturing method for silica layer, and silica layer

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in anH-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl, when a peak derived from NSiHand NSiHis referred to as Peak 1 and a peak derived from NSiHis referred to as Peak 2, a ratio (P/(P+P)) of an area (P) of Peak 1 relative to a total area (P+P) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P/P) of an area (P) of Region A relative to an area (P) of Region B is greater than or equal to about 1.5.

Composition for forming silica layer, silica layer and electronic device incorporating silica layer

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiOconversion rate of greater than about 0 and less than or equal to about 15. The SiOconversion rate is represented by: SiOconversion rate=(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%)&#x2212;(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%).

Composition for forming silica layer, silica layer, and electronic device

A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

Method of forming patterns, patterns formed according to the method, and semiconductor device including the patterns

A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25&#xb0; C.

Composition for forming silica layer, method for manufacturing silica layer and silica layer

A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50.&#x3b7;=&#x2003;&#x2003;[Equation 1] In Equation 1,

Composition for forming silica layer, method for manufacturing silica layer, and electric device including silica layer

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Suwon-si, South Korea

Taeksoo Kwak