Samsung Electronics Co., Ltd.

TaekSoo Jeon

Sangjin Hyun

Wonkeun Chung

Gigwan Park

Huyong Lee

Wandon Kim

Byung-Suk Jung

Shinhye Kim

Kyungbum Koo

A semiconductor device includes a substrate having an active pattern thereon, a gate electrode intersecting the active pattern, and a spacer on a sidewall of the gate electrode. The gate electrode includes a first metal pattern adjacent to the active pattern. The first metal pattern has a first portion parallel to the sidewall and a second portion parallel to the substrate. A top surface of the first portion has a descent in a direction from the spacer towards the second portion.

Semiconductor device having a multi-portion gate electrode

Semiconductor device having gate electrodes with stacked metal layers

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate with an active pattern, a gate electrode provided at the active pattern, and a gate capping structure disposed above the gate electrode. The gate capping structure may include two or more gate capping patterns with different properties from each other, and the use of the gate capping structure makes it possible to form contact plugs in a self-aligned manner and improve operational speed and characteristics of the semiconductor device.

Semiconductor device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

TaekSoo Jeon