Micron Technology Incorporated

Rambus Inc.

Taeksang Song

Saira Samar Malik

Chinnakrishnan Ballapuram

Kang-Yong Kim

Hyunyoo Lee

Steven Cameron Woo

Craig Edward Hampel

Evan Lawrence Erickson

Akhila Gundu

Kimberly Judy Lobo

John Eric Linstadt

Michael Raymond Miller

Torsten Partsch

Sahil Soi

A buffer integrated circuit (IC) chip is disclosed. The buffer IC chip includes host interface circuitry to receive a read command to retrieve read data from a memory. Memory interface circuitry couples to the memory. Data freshness authentication circuitry performs a freshness verification operation on the read data. Read data forwarding circuitry, in a skid mode of operation, transmits the read data to the host prior to completion of the freshness verification operation.

Buffer device with low-latency skid mode for data freshness

A high-capacity cache memory is implemented by multiple heterogenous DRAM dies, including a dedicated tag-storage DRAM die architected for low-latency tag-address retrieval and thus rapid hit/miss determination, and one or more capacity-optimized cache-line DRAM dies that render a net cache-line storage capacity orders of magnitude beyond that of state-of-the art SRAM cache implementations. The tag-storage die serves double-duty in some implementations, yielding rapid tag hit/miss determination for cache-line read/write requests while also serving as a high-capacity snoop-filter in a memory-sharing multiprocessor environment.

DRAM cache with stacked, heterogenous tag and data dies

An apparatus and method for flexible metadata allocation and caching. In one embodiment of the method first and second requests are received from first and second applications, respectively, wherein the requests specify a reading of first and second data, respectively, from one or more memory devices. The circuit reads the first and second data in response to receiving the first and second requests. Receiving first and second metadata from the one or more memory devices in response to receiving the first and second requests. The first and second metadata correspond to the first and second data, respectively. The first and second data are equal in size, and the first and second metadata are unequal in size.

Flexible metadata allocation and caching

Methods, systems, and devices for die voltage regulation are described. A device may include a first die and second die. A component that generates voltage on the first die may be connected to a capacitor on the second die through a conductive line. The conductive line may allow the capacitor on the second die to regulate voltage generated by the component on the first die.

Voltage generation and regulation across multiple dies

Technologies for securing dynamic random access memory contents to non-volatile memory in a persistent memory module are described. One persistent memory module includes an inline memory encryption (IME) circuit that receives a data stream from a host, encrypts the data stream into encrypted data, and stores the encrypted data in DRAM. A management processor transfers the encrypted data from the DRAM to persistent storage memory responsive to a signal associated with a power-loss or power-down event.

Securing dynamic random access memory (DRAM) contents to non-volatile in a persistent memory module

Methods, systems, and devices for programmable column access are described. A device may transfer voltages from memory cells of a row in a memory array to respective digit lines for the memory cells. The voltages may be indicative of logic values stored at the memory cells. The device may communicate respective control signals to a set of multiplexers coupled with the digit lines, where each multiplexer is coupled with a respective subset of the digit lines. Each multiplexer may couple a digit line of the respective subset of digit lines with a respective sense component for that multiplexer based on the respective control signal for that multiplexer.

Programmable column access

Row addresses received by a module are mapped before being received by the memory devices of the module such that row hammer affects different neighboring row addresses in each memory device. Thus, because the mapped respective, externally received, row addresses applied to each device ensure that each set of neighboring rows for a given row address received by the module is different for each memory device on the module, row hammering of a given externally addressed row spreads the row hammering errors across different externally addressed rows on each memory device. This has the effect of confining the row hammer errors for each row that is hammered to a single memory device per externally addressed neighboring row. By confining the row hammer errors to a single memory device, the row hammer errors are correctible using a SDDC scheme.

Interconnect based address mapping for improved reliability

Methods, systems, and devices for improved techniques for partial writes are described. A memory device may include a non-volatile memory and a volatile memory configured to operate as a cache for the non-volatile memory. The memory device may receive, from a host device, a write command for a first data set provided by the host device. Based on the write command, the memory device may store the first data set in a buffer coupled with a volatile memory. After storing the first data set in the buffer, the memory device may communicate to the volatile memory a set of data that includes the first data set and a second data set. The first data set and the second data may be associated with adjacent addresses for the volatile memory and may each have sizes smaller than a threshold size associated with the volatile memory.

Techniques for partial writes

Methods, systems, and devices for quality-of-service information for a multi-memory system are described. An interface controller may receive a first command from a host device during a set of clock cycles. The first command may be received over a command bus that includes a pin, such as a command select pin configured for double data rate signaling. The interface controller may decode the first command based on a state of the command select pin during at least one clock cycle of the set of clock cycles. And the interface controller may determine quality-of-service information for a second command based on decoding the first command and on information, such as a plurality of bits, included in the first command.

Quality-of-service information for a multi-memory system

Methods, systems, and devices for an efficient turnaround policy for a bus are described. A device may include a memory and a bus for communicating with the memory. The device may operate the bus in a first direction, relative to the memory, that is associated with a first type of access command. The device may determine, for the memory, that a quantity of queued access commands of a second type are for one or more banks that have satisfied a timing constraint for activating different rows in a same bank. Based on determining that the quantity of queued access commands of the second type are for one or more banks that have satisfied the timing constraint, the device may operate the bus in a second direction, relative to the memory, that is associated with the second type of access command.

Efficient turnaround policy for a bus

Methods, systems, and devices for centralized error correction circuit are described. An apparatus may include a non-volatile memory disposed on a first die and a volatile memory disposed on a second die (different than the first die). The apparatus may also include an interface controller disposed on a third die (different than the first die and the second die). The interface controller may be coupled with the non-volatile memory and the volatile memory and may include an error correction circuit that is configured to operate on one or more codewords received from the volatile memory.

Centralized error correction circuit

Methods, systems, and devices for opportunistic data movement are described. A memory device may include a non-volatile memory and a volatile memory that operates as a cache for the non-volatile memory. The memory device may receive a write command from a host device. The write command may be associated with a row of a bank in a volatile memory. The memory device may write data associated with the write command to a buffer that is associated with the bank and that is coupled with the volatile memory. And the memory device may communicate the data from the buffer to the volatile memory based on the write command and before a pre-charge command for the row of the bank is received from the host device.

Opportunistic data movement

Methods, systems, and devices for cache management in a memory subsystem are described. An interface controller may include a first buffer and a second buffer. The interface controller may use the first and second buffers to facilitate operating a volatile memory as a cache for a non-volatile memory. During an access operation, the interface controller may use the buffer to transfer data between the volatile memory, non-volatile memory, and another device. In response to the access operation, the interface controller may use the second buffer to transfer second data from the volatile memory to the non-volatile memory.

Cache management in a memory subsystem

Methods, systems, and devices for strategic power mode transition in a multi-memory device are described. A controller may receive, from a host device, a command indicating that the controller is to transition a volatile memory and a non-volatile memory from respective deep sleep modes. In a first example, the controller may respond to the command by transitioning the volatile memory to a standby power mode for the volatile memory and transitioning the non-volatile memory to an intermediate power mode for the non-volatile memory that consumes less power than a standby mode for the non-volatile memory. In a second example, the controller may respond to the command by transitioning the volatile memory to the standby power mode for the volatile memory and maintain the non-volatile memory in the deep sleep mode until a condition, such as a miss, occurs.

Strategic power mode transition in a multi-memory device

Methods, systems, and devices for power mode control in a multi-memory device are described. An apparatus may include a non-volatile memory and a volatile memory. The apparatus may operate the volatile memory in a first power mode and the non-volatile memory in a second power mode. The apparatus may transition the volatile memory from the first power mode to a third power mode based on a power mode command from a host device. The apparatus may transition the non-volatile memory from the second power mode to a fourth power mode that consumes less power than the second power mode irrespective of the command from the host device and based on a quantity of queued commands for the non-volatile memory being less than a threshold quantity.

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San Jose, CA, United States of America

Taeksang Song