Samsung Electronics Co., Ltd.

Taekeun Cho

Jin-Woo Park

Kyoung-Hoon Kim

Taehee Lee

Seok-Won Lee

Hongsoo Kim

Seungwoo Paek

Jong-kook Park

Sunyeong Lee

A semiconductor device comprises a plurality of stack structures that include gate electrodes sequentially stacked on a substrate and are disposed along a first direction, and a plurality of separating insulation layers each of which is disposed between the stack structures. A plurality of vertical pillars penetrate each of the stack structures and are connected to the substrate. A plurality of bit lines are disposed on the vertical pillars and run across the stack structures in the first direction. A plurality of bit line contact structures connect the vertical pillars to the bit lines. A plurality of first cell dummy lines are disposed on the plurality of separating insulation layers and extend in a second direction crossing the first direction.

Semiconductor device

Three-dimensional (3D) semiconductor devices are provided. The 3D semiconductor device includes a plurality of dummy pillars penetrating each cell pad of an electrode structure and the electrode structure disposed under each cell pad. Insulating patterns of a mold stack structure for formation of the electrode structure may be supported by the plurality of dummy pillars, so transformation and contact of the insulating patterns may be minimized or prevented.

Three-dimensional semiconductor devices

Growing community of inventors

Seoul, South Korea

Taekeun Cho