Samsung Electronics Co., Ltd.

Kowa Company Limited

Techsign Light Panel Co., Ltd.

Nexteye Co., Ltd.

Taek Woon Kim

Young-soo Park

Jun-youn Kim

Bok-ki Min

Kyoung-kook Kim

Moon-seung Yang

Ki-sung Kim

Jae-Chul Park

Su-hee Chae

Hyung-su Jeong

Joo-sung Kim

Gi-bum Kim

Kazuhiro Kashiwagi

Junyoun Kim

Kunitoshi Shimizu

Isao Koike

Akira Ikemoto

Seog Joon Kim

Mee Suk Rho

Youngsoo Park

Heon-su Jeon

Igor Shcherbatko

Jang Seok Choi

Kyoungkook Kim

Min Jin Song

Duanhua Kong

Soo-haeng Cho

Bokki Min

Sang Chul Won

Hani Yang

A method of operating a memory device includes; receiving a refresh command, performing a refresh operation on a target row of a bank memory array, and providing status information to a memory controller for an adjacent row, relative to the target row, during a refresh operation period defining a refresh operation performed by the memory device.

Memory device, memory system and operating method

There is provided a refrigerator, including an input unit configured to receive information on a user, the user's health information, and an examination time; a control unit configured to perform control such that the received user information and health information are stored and displayed, identify a reception time at which the health information is received, and perform control such that at least one time of the examination time and the reception time is stored and displayed; a storage unit configured to accumulate and store the user's health information and examination time and match the user information and the health information for each examination time and store; and a display unit configured to display the health information in order of the examination time. According to the present disclosure, since a health state is determined according to accumulated health information and the determined health state is displayed through the display unit, the user is continuously informed of the health state and is well aware of health. Further, the user may improve eating habits to prevent and manage various types of diseases.

Refrigerator, terminal, and method of controlling the same

A laser device includes a silicon substrate, a buffer layer on the silicon substrate, a laser cavity on the buffer layer including a first active region based on group III-V semiconductor quantum dots, and a semiconductor optical amplifier that is integrated with the laser cavity on the buffer layer, includes a second active region based on group III-V semiconductor quantum dots, and amplifies light emitted from the laser cavity.

Laser device integrated with semiconductor optical amplifier on silicon substrate

Disclosed herein is an edge-type lighting device which is configured such that when a light guide plate thermally expands, a light source is prevented from being pressed. In the lighting device according to the present invention, a light guide plate () is slidably supported so that the light guide plate () can expand in the planar direction, and a light source () disposed on an edge of the light guide plate () is movably supported in the same direction. A light-guide-plate stopper () is disposed at a position facing an edge (A) of the light guide plate () to prevent the light guide plate () from expanding excessively. Thus, the light source () can be prevented from being pressed toward a frame member ().

Lighting device

A multi-port light source of a photonic integrated circuit (PIC) may include a light emission portion for generating light; and a plurality of waveguides on opposite sides of the light emission portion to guide the light. A multi-port light source of a photonic integrated circuit (PIC) may include a first layer including a first pattern and a second pattern that are different from each other; an insulating layer on at least a region of the first layer; an active layer on at least a region of the insulating layer; and a reflective layer on the active layer.

Multi-port light sources of photonic integrated circuits

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

Hybrid vertical cavity laser for photonic integrated circuit

A hybrid vertical cavity laser includes an optical circuit substrate including a grating having refractive index units having a lower refractive index and a higher refractive index with respect to each other that are alternately arranged in a first direction, and a waveguide guiding light in the first direction, a mesa structure on the optical circuit substrate, the mesa structure including a first-type semiconductor layer including an exposed portion, an active layer, a second-type semiconductor layer, and an upper reflective layer sequentially stacked in a second direction perpendicular to the first direction, a first electrode on the exposed portion, and a second electrode on the upper reflective layer. An overlapped length between the waveguide and a mesa aperture forming an opening through which light produced from the active layer enters the grating is D, a pitch of the grating is p, and 0&#x3c;D&#x3c;p.

Hybrid vertical cavity laser and method of manufacturing the same

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

Hybrid laser light sources for photonic integrated circuits

A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other.

Light emitting device

A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.

Nanostructured light-emitting device

The present invention relates to an edge-type lighting device using an LED light source which has high light-emitting efficiency regardless of thermal expansion of a light guide plate. An LED light source () is disposed on an edge of a light guide plate () so as to be movable in the normal line direction (&#xb1;n) of the edge () of the light guide plate. A slide member () is slidably disposed on the rear surface of the LED light source. A spring () is disposed in a frame member () on the rear surface of the slide member. Thus, the LED light source can always be pressed toward the edge of the light guide plate regardless of the thermal expansion of the light guide plate. Because the spring has a simple structure, the lighting device can be compact compared to the case where a coil spring is used.

Edge-type LED lighting device having a high luminous efficiency despite thermal expansion of the lightguide plate

A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlGaN(0&#x3c;x&#x3c;1)/GaN superlattice structure; an active layer on the current spreading layer (or on the first type semiconductor nanocore if the current spreading layer is embedded in the first type semiconductor nanocore); and a second type semiconductor layer on the active layer.

Nano-structured light-emitting devices

Light-emitting devices (LED) and methods of manufacturing the same. A LED includes a first type semiconductor layer, a nano array layer that includes a plurality of nano structures each including a first type semiconductor nano core selectively grown from the first type semiconductor layer, and an active layer and a second type semiconductor layer sequentially grown from a side surface of the first type semiconductor nano core, and that is formed in a selective growth region formed in a surface of the first type semiconductor layer, a first electrode layer that is formed to be used when a voltage is applied to the first type semiconductor layer and formed in a predetermined pattern connecting regions that do not correspond to the selective growth region in the first type semiconductor layer, a second electrode layer formed to be used when a voltage is applied to the second type semiconductor layer on the plurality of nano structures, and an insulating layer formed between the first electrode layer and the second electrode layer so that the first electrode layer is insulated from the second electrode layer.

Light-emitting devices and methods of manufacturing the same

A photodetector includes a waveguide on a substrate, and a photodetection portion connected to the waveguide. The photodetection portion includes a first semiconductor layer, graphene on the semiconductor layer, and a second semiconductor layer on the graphene. A first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.

Waveguide-integrated graphene photodetectors

A light-emitting diode and a method of manufacturing the light-emitting diode are provide, the light-emitting diode including a lower electrode on a substrate, a template layer on the lower electrode. The template layer may have a plurality of open regions. A plurality of nano-dashes may be formed in the plurality of open regions of the template layer. A transparent insulating layer may be formed between the nano-dashes. A transparent upper electrode may be formed on the nano-dashes and the transparent insulating layer.

Growing community of inventors

Seongnam-si, South Korea

Taek Woon Kim