Skhynix Inc.

Oci Company Ltd.

Institute of Ion-plasma and Laser Technologies

Taek Joong Kim

Jin Hui Lee

Yong Su Han

Yong Il Kim

Kyung Y Kim

Wan Choon Park

Deok Yun Kim

Sung Su Park

Azizov Sultan

Salikhov Shavkat

Rotshteyn Vladimir

Ashurov Khatam

Ashurova Khekayat

Kurbanov Aziz

Abdisaidov Ilyos

Ashurov Rustam

Tae Ho Jo

Kyung Yeol Kim

A semiconductor device includes a plurality of semiconductor chips connected through a scribe lane; a plurality of through electrodes formed in each of the plurality of semiconductor chips; a heat dissipation member formed in the scribe lane; and heat transfer members connecting the through electrodes with the heat dissipation member.

Semiconductor device and stacked semiconductor package having the same

The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

Bump structures in semiconductor packages and methods of fabricating the same

Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Method for preparing monosilane using trialkoxysilane

A semiconductor package includes a substrate and an optical communication part. A first chip stack part and a second chip stack part are disposed over the substrate and are separate from each other, and the optical communication part is disposed in a cavity formed in the substrate to provide an optical signal path between the first and second chip stack parts.

Semiconductor package with an optical signal path, memory card including the same, and electronic system including the same

A stacked semiconductor package includes a first semiconductor chip having one surface, and an other surface which faces away from the one surface, and first through electrodes which pass through the one surface and the other surface and project out of the other surface; a second semiconductor chip stacked over the one surface of the first semiconductor chip and having second through electrodes which are connected with the first through electrodes; a heat dissipation member disposed over the second semiconductor chip; and a first heat absorbing member disposed to face the other surface of the first semiconductor chip and defined with through holes into which projecting portions of the first through electrodes are inserted.

Stacked semiconductor package

Growing community of inventors

Seoul, South Korea

Taek Joong Kim