Samsung Electronics Co., Ltd.

Taek-Jin Lim

Jae-Jong Han

Jung-Geun Jee

Yong-woo Hyung

Ho-Min Son

Jin-sung Kim

Gui-Jin Kim

A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.

Method of forming nonvolatile memory device having floating gate and related device

Method and apparatus for estimating the performance of a gas tube. The method comprising the steps of: (a) preparing a sample tube to be analyzed and cutting the sample tube in a desired size and shape; (b) examining distribution of defects and surface condition of the cut sample tube with an optical microscope; (c) analyzing structure and composition of surface defects which can not be measured in the step (b), to determine type and composition of the surface defects and shape of a surface grain; (d) analyzing structure of an inner surface-treated layer of the sample tube along the thickness thereof; and (e) synthetically analyzing data for defect density and surface roughness, which are numerically expressed through the steps (a) to (d), to define a reference data which can be used in a semiconductor manufacturing process.

Method and apparatus for estimating performance of gas tube

Growing community of inventors

Hwaseong-si, South Korea

Taek-Jin Lim