Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

Seoul National University

Samsung Sdi Germany Gmbh

Taek Ahn

Min-Chul Suh

Jin-Seong Park

Jae-Bon Koo

Yeon-gon Mo

Jung-Han Shin

Yong-Woo Park

Seok-Jong Lee

Sung Jin Kim

Tae-Min Kang

Hye-Dong Kim

Hun-Jung Lee

Sin-Doo Lee

Werner Humbs

Fischer Joerg

Jin-Saong Park

An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

Method of manufacturing an organic thin film transistor

An organic thin film transistor in which source and drain electrodes have a double layer structure to aid patterning of an organic semiconductor layer using a laser beam, and a flat display device having the organic thin film transistor. The organic thin film transistor includes: a gate electrode; a source electrode and a drain electrode insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and having a portion patterned to electrically connect to the source and drain electrodes; and a protection layer formed on the source and drain electrodes.

Organic thin film transistor and flat display device having the same

A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

Thin film transistor and flat panel display having the thin film transistor

An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

Organic thin film transistor and method of fabricating the same

An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

Method of fabricating an organic thin film transistor

An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor

A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

Flat panel display and method of fabricating the same

An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

Organic thin film transistor and flat panel display device having the same

The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C-Caryl group and an unsubstituted or substituted C-Cheteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.

Organic thin film transistor including a self-assembly monolayer between an insulating layer and an organic semiconductor layer and flat panel display comprising the same

Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor

Organic thin film transistor, method of manufacturing the same, and flat panel display device with the organic thin film transistor

An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.

Organic thin film transistor and method of manufacturing the same

Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

Organic thin film transistor, method of manufacturing the same, and organic light emitting display device having the same

An organic thin film transistor (OTFT) having a patterned organic semiconductor layer on top of an electrode wiring layer. In order to avoid damage to the underlying electrode wiring layer, the organic semiconductor layer is patterned so that none of the organic semiconductor layer is removed off the electrode wiring layer. The patterned organic semiconductor layer completely covers all of the underlying electrode wiring layer. The OTFT includes a gate electrode, source and drain electrodes insulated from the gate electrode and an organic semiconductor layer which is insulated from the gate electrode and is in contact with the source and drain electrodes, wherein the organic semiconductor layer completely covers the source and drain electrodes. In addition, an organic light emitting display device includes more than one OTFT as well as an organic light-emitting element electrically connected to the electrical conductor.

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Suwon-si, South Korea

Taek Ahn