Samsung Electronics Co., Ltd.

Taejoong Kim

Kangmoon Kim

Junghyun Choi

Junghyuck Im

Keemoon Lee

James Chung

Jongsu Kim

Sungha Kim

Kijoo Hong

Junse Kim

Kwangsung Lee

Doohyun Cho

Kwang Soo Kim

Woohyeok Jeong

Kukhwan Kim

Sangyun Lee

Youngsang Jang

Youngduk Kim

Byeonghwan Jeon

Yongsuk Choi

Taeseok Oh

Seungbeom Park

Youngkyu Park

Changhoon Choi

Jihoon Na

Kieon Lee

Seunghwa Hyun

Youngsu Ryu

Min Whoa Hong

Jaeyoun Wi

Wansung Park

Jeongsu Ha

Yamauchi Kenji

Hyounggon Kim

Yong-Ho Choi

An EUV photomask inspection apparatus includes a plurality of optical systems respectively forming different confocal points in a mask structure including an EUV photomask and a pellicle on the EUV photomask. A first optical system among the plurality of optical systems includes a first light source emitting first light having a wavelength in a visible light range, a beam splitter transmitting or reflecting the first light, an objective lens configured to allow the first light to pass through at least a portion of the mask structure to form a first focus in the mask structure, a first light detector configured to detect first reflected light reflected from the mask structure by the incident first light, and a pinhole plate in front of the first light source. The first light detector includes a detection module including a PMT and an APD, and a thermoelectric cooling module.

EUV photomask inspection apparatus

A wafer processing apparatus includes an X-θ stage unit having a rotary chuck capable of moving in an X direction and rotating in a θ direction, wherein a wafer is mounted on the rotary chuck and the wafer includes an edge portion adjacent to an edge of the wafer. In addition, the wafer processing apparatus includes: an edge bead removal (EBR) measurement and eccentricity measurement unit which is capable of inspecting a bead removal state of the edge portion of the wafer, and measuring eccentricity between the center of the rotary chuck and the center of the wafer; and an edge exposure of wafer (EEW) process unit which exposes the edge portion of the wafer after correcting the eccentricity between the center of the rotary chuck and the center of the wafer measured by the EBR measurement and eccentricity measurement unit.

Wafer processing apparatus

A thickness estimation method may include: obtaining a test spectrum image; obtaining test spectrum data; measuring a thickness of a test layer formed on the test substrate at the plurality of positions; generating a regression analysis model using a correlation between the thickness of the test layer and the test spectrum data; obtaining a spectrum image; and estimating a thickness of a target layer over the entire area of the semiconductor substrate by applying the spectrum image to the regression analysis model. The thickness corresponding to the entire area of the semiconductor substrate that is being transferred is estimated using the thickness estimation method according to an exemplary embodiment in the present disclosure, such that whether or not processing is normally performed may be examined without requiring a separate time. In addition, an examination result may be feedbacked to processing equipment to improve production yield.

Thickness estimation method and processing control method

A thickness estimating apparatus includes a transfer robot, a light source, a camera, a memory and a controller. The memory stores a thickness predicting model generated based on a data set including a thickness of at least one of a test wafer corresponding to the wafer or a test element layer formed on the test wafer, and the thickness predicting model being trained to minimize a loss function of the data set. The controller applies pixel data, which is acquired from at least one pixel selected from a plurality of pixels included in a captured image, to the thickness predicting model, to predict a thickness of at least one of the wafer or an element layer formed on the wafer in a position corresponding to a position of the selected pixel.

Wafer inspection apparatus and method

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Electronic device

An optical inspection apparatus includes an inspection target unit on which an inspection target is loaded, an illumination optical unit configured to irradiate incident light to the inspection target, an objective lens unit disposed between the illumination optical unit and the inspection target unit, a detection optical unit configured to receive reflective light reflected from the inspection target to thereby detect a presence or absence of a defect on the inspection target, and a control unit configured to control the illumination optical unit and the detection optical unit. The illumination optical unit includes a light source part configured to irradiate the incident light, and a spatial filter array configured to modify a transmission region of the incident light irradiated from the light source part. The spatial filter array includes a spatial filter part, and a filter movement part configured to move the spatial filter part.

Optical inspection apparatus, a method of inspecting a substrate, and a method of treating a substrate

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Goyang-si, South Korea

Taejoong Kim