Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Unist (ulsan National Institute of Science and Technology )

Taejin Choi

Sung Young Yun

Kyung Bae Park

Yeong Suk Choi

Chul Joon Heo

Gae Hwang Lee

Seon-Jeong Lim

Chul Baik

Jisoo Shin

Yong Wan Jin

Youn Hee Lim

Hye Rim Hong

Katsunori Shibata

Hyesung Choi

Jeong Il Park

Ohkyu Kwon

Hiromasa Shibuya

Ji Soo Shin

Hyeonjin Shin

Feifei Fang

Norihito Ishii

Hyeongju Kim

Sung Jun Park

Sangwon Kim

Dong-Seok Leem

Sangmo Kim

Sang Mo Kim

Jong Won Choi

Sungyoung Yun

Hyerim Hong

Changseok Lee

Yeonchoo Cho

Keunwook Shin

Hyunjae Song

Eunkyu Lee

Takkyun Ro

Hyeong-Ju Kim

Minsu Kim

Eun Kyung Lee

Kyung-Eun Byun

Yutaka Matsuo

Don-Wook Lee

Hyun Bum Kang

Jeoungin Yi

Hyeonsuk Shin

Chui Joon Heo

Hwijoung Seo

Juhyung Lim

An interconnect structure for reducing a contact resistance, an electronic device including the same, and a method of manufacturing the interconnect structure are provided. The interconnect structure includes a semiconductor layer including a first region having a doping concentration greater than a doping concentration of the rest region of the semiconductor layer, a metal layer facing the semiconductor layer, a semi-metal layer between the semiconductor layer and the metal layer, and a conductive metal oxide layer between the semi-metal layer and the semiconductor and covering the first region.

Interconnect structure to reduce contact resistance, electronic device including the same, and method of manufacturing the interconnect structure

A compound that may be applied to a sensor to improve electrical properties thereof is represented by Chemical Formula 1: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound, sensor, sensor embedded display panel, and electronic device

Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.

Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Image sensors and image processing apparatus and electronic devices

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound. In Chemical Formula 1, X, X, X, Ar, L, A, R, and Rare the same as in the specification.

Compound and sensor and sensor embedded display panel and electronic device

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Sensor embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Sensor-embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Disclosed are a photoelectric conversion device includes a first electrode and a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and an organic buffer layer between the first electrode and the photoelectric conversion layer, the organic buffer layer including an organic buffer material, wherein a difference between a LUMO energy level of the organic buffer material and a LUMO energy level of the n-type semiconductor is greater than or equal to about 1.2 eV and the organic buffer material includes at least three carbazole moieties, and a sensor, and an electronic device including the same.

Photoelectric conversion device and sensor and electronic device

A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Composition for photoelectric device, and image sensor and electronic device including the same

Provided are an amorphous boron nitride film and an anti-reflection coating structure including the amorphous boron nitride film. The amorphous boron nitride film has an amorphous structure including an sphybrid bond and an sphybrid bond, in which a ratio of the sphybrid bond in the amorphous boron nitride film is less than about 20%.

Amorphous boron nitride film and anti-reflection coating structure including the same

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, the definition of each group and parameter is as described in the detailed description.

Growing community of inventors

Suwon-si, South Korea

Taejin Choi