Industry-University Cooperation Foundation Hanyang University

Taehyeon Noh

Younghyun Kim

Taewon Jin

Seongui An

Simin Chen

Seoungmin Park

The present invention relates to a pixel circuit, a display device using the same, and a method of manufacturing the same. A pixel circuit according to the present technology is a pixel circuit including a light-emitting diode and can include a light-emitting diode, the pixel circuit including a switching transistor connected to a node at which a scan line and a signal line intersect each other, a driving transistor which receives a data voltage in the signal line through the switching transistor and converts the data voltage to a current to be supplied to the light-emitting diode, and a storage capacitor which maintains a voltage applied by the switching transistor, wherein at least one of the driving transistor and the storage capacitor includes a layer formed of a ferroelectric. The present technology can provide a pixel circuit using a programmable driving TFT or programmable storage capacitor using a ferroelectric instead of a compensation circuit for compensating a critical voltage of the conventional current drive-based display circuit.

Pixel circuit, display device using the same and manufacturing method thereof

Disclosed herein are a non-volatile memory device and an operating method thereof. The non-volatile memory device includes a memory cell including a write transistor and a ferroelectric read transistor, a write word line connected to a gate terminal of the write transistor, a write bit line connected to a source terminal of the write transistor, a read word line connected to a source terminal of the ferroelectric read transistor, and a read bit line connected to a drain terminal of the ferroelectric read transistor, and a drain terminal of the write transistor may be connected to a gate terminal of the ferroelectric read transistor. According to the present invention, a low-power, high-density, and non-destructive dynamic random access memory (DRAM) can be implemented by realizing 2T0C FeDRAM based on a silicon complementary metal-oxide semiconductor (CMOS) process using a dielectric material.

Growing community of inventors

Yongin-si, South Korea

Taehyeon Noh