Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Yonsei University

Medintech Inc.

Taehyeon Kim

Laeyoung Kim

Hyunsook Kim

Jaehyun Kim

Jinsook Ryu

Taehun Kim

Saso Stojanovski

Sungduck Chun

Li-Hsiang Sun

Arnaud Vedrine

Kyungin Choi

Taegon Kim

Yuichiro Sasaki

Jaeyoung Park

Daehyeong Lim

Hongshik Shin

Youngdae Lee

Jeongmin Park

Daeung Jeong

Kyungmin Park

Sunghoon Jung

Jian Xu

Daewook Byun

Alexandre Saso Stojanovski

Seunghyun Lee

Wonseok Lee

Seongmin Je

Seunghun Lee

Pilsang Yun

Jongseok Moon

JaeHyun Kim

Donguk Kwak

Kidong Lee

Jinhee Won

Seokhyeon Yoon

Daniel Joe

Jaehyuck Park

Minhyun Cho

Myungjoon Kim

Jungmo Kim

Shin Jung Choi

DaeHong Ko

Misun Lee

DongHyeok Lim

KwangSik Jeong

MannHo Cho

Hyeongrae Kim

Jinwoo Seo

Jeongsu Lee

Chiwon Lee

Yunju Cho

Eui Ho Kim

Sunghoon Lee

A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate structures are formed on the first and second active patterns, and extend in a second direction. The first and second source/drain layers are formed on the first and second active patterns adjacent to the first and second gate structures. The first active pattern includes a first well having first and second impurity regions. The second active pattern includes a second well having third and fourth impurity regions. A width in the second direction of the first impurity region is greater than that of the second impurity region. A width in the second direction of the third impurity region is smaller than that of the fourth impurity region.

Semiconductor devices having different impurity regions in active pattern

An electronic device and a method for controlling the electronic device are provided. The electronic device includes a motion sensor and optical sensors. Each of the optical sensors includes a light emitter and a light receiver. The optical sensors are separately driven to determine a respective signal characteristic of each of the optical sensors. A current state of an object to be measured is determined, based on at least one signal received through the motion sensor or the optical sensors. A light emitter of at least one of the optical sensors is driven, based on the respective signal characteristics of the optical sensors according to the current state of the object to be measured. Based on the respective signal characteristics of the optical sensors, a light signal sensed through a light receiver of at least one of the optical sensors is selected and received.

Electronic device including multiple optical sensors and method for controlling the same

According to one embodiment of the present disclosure, there is disclosed a method of reconstructing images of the inside of the body that is performed by a computing device including at least one processor. The method includes: obtaining basic data including the pose information of an end of an endoscopic scope and a captured image of the inside of the body; and generating a three-dimensional (3D) final image of the inside of the body by reconstructing the basic data using feature points including the image information of the surface of the inside of the body for the basic data.

Method and apparatus for reconstructing images of inside of body obtained through endoscope device

A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

Method of fabricating semiconductor device

Provided is an electronic device including a housing; a battery; a user interface; a photoplethysmogram (PPG) sensor including a light receiving module exposed through a portion of the housing, at least one light emitting diode (LED), and at least one photodiode; a processor operatively connected to the battery, the user interface, and the PPG sensor; and a memory. According to an embodiment, the memory stores instructions that, when executed, cause the processor to determine whether the PPG sensor is facing a surface of an external object having a reference color, determine whether to perform a test of the PPG sensor based on whether the PPG sensor is facing the surface, receive data from the PPG sensor by operating the PPG sensor in response to determining to perform the test, and perform calibration of the PPG sensor based on at least a portion of the received data. Other embodiments are possible.

Electronic device and method of operating the same

A method of controlling a backoff timer at a user equipment (UE) configured for dual priority, the method includes transmitting a non access stratum (NAS) request message without an access point name (APN) including a low priority indicator set to a first value to a network node, wherein the first NAS request message without the APN is an attach request message transmitted along with a packet data network (PDN) connectivity request without the APN; receiving a reject message for the NAS request message from the network node, and wherein a cause in the reject message is set to insufficient resources; setting the low priority indicator to a second value; and initiating a new attach procedure without the APN, while a session management (SM) backoff timer is running, wherein the first value of the low priority indicates that the UE is configured for NAS signaling low priority.

Method and device for controlling multipriority in wireless communication system

The present specification provides a method for connecting an IP multimedia subsystem (IMS)-based service in a terminal. The method for connecting the IMS-based service, includes the steps of: setting a cause value denoting signaling or due to the IMS in an establishment cause field, when a session initiation protocol (SIP)-based message is required to be transmitted on a user plane for connecting the IMS-based service; transmitting a service request message of a non-access stratum (NAS) layer including service type (field) denoting signaling or due to a base station; and transmitting a radio resource control (RRC) connection request message including the set establishment cause field to the base station.

Method for connecting IMS-based service

The present invention relates to a wireless communication system, and more particularly, to a method and an apparatus for processing a NAS signaling request. A method for performing a non-access stratum (NAS) signaling process by means of a terminal in a wireless communication system according to one embodiment of the present invention comprises: a step of receiving a first message that includes information indicating a network failure from a network node of a first network; a step of starting a timer relating to a network selection; and a step of selecting a second network from among network candidates excluding the first network during the operation of the timer relating to a network selection.

Method and apparatus for processing NAS signaling request in wireless communication system

The present invention relates to a method and a device for performing group communication based on a proximity service (ProSe) in a wireless communication system. More specifically, the method comprises the steps of: enabling a relay terminal (relay user equipment, relay UE, ProSe UE-to-Network relay) to register group communication in a network node; and enabling the relay terminal to perform the group communication with the network node, wherein the group communication is configured to transmit a downlink signal using a multimedia broadcast and multimedia service (MBMS) if the number of terminals, except for a relayed terminal (relayed user equipment, relayed UE) among a plurality of terminals registered in the network node, is not less than a reference value.

Group communication method and device for providing proximity service

A method for adjusting a timer value for a device includes determining, by a home subscribing server (HSS), a timer value for a routing area update (RAU) or a tracking area update (TAU) based on a maximum time period, wherein the timer value for the RAU or the TAU is determined to be a smaller value than the maximum time period, wherein the maximum time period is related to a loss of a connectivity indicating the device is no longer possible to be signaled, and delivering, by the HSS, information regarding the determined timer value for the RAU or the TAU to a Mobility Management Entity (MME)/Serving General Packet Radio Service (GPRS) Supporting Node (SGSN).

Method of providing MTC monitoring related information

A method of supporting a user equipment (UE) to UE (UE-to-UE) communication by a network in a wireless communication system, the method includes transmitting a system information block associated with the UE-to-UE communication, wherein the system information block contains a period parameter indicating a periodicity at which a relay UE transmits discovery announcement, wherein the system information block contains a high threshold value and a low threshold value, wherein the relay UE is not allowed to transmit the discovery announcement if a reference signal received power (RSRP) measured by the relay UE is above the high threshold value, and wherein the relay UE is not allowed to transmit the discovery announcement if the RSRP measured by the relay UE is below the low threshold value.

Repeater operation method and apparatus in wireless communication system

An electronic device may include a topological insulating layer including first and second surfaces facing each other and a transition metal oxide layer provided on the first surface of the topological insulating layer. The topological insulating layer may have a thickness ranging from 1 nm to 10 nm.

Electronic device including topological insulator and transition metal oxide

Growing community of inventors

Anyang-si, South Korea

Taehyeon Kim