Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Ofinno, LLC

Lg Display Co., Ltd.

Comcast Cable Communications, LLC

Sap Se

Korea Institute of Science and Technology

Dongguk University Industry-academic Cooperation Foundation

Taehun Kim

Jinsook Ryu

Laeyoung Kim

Jaehyun Kim

Hyunsook Kim

Youngdae Lee

Sangmin Park

Jaewook Lee

Jongwoo Hong

Esmael Hejazi Dinan

Kyungmin Park

Myungjune Youn

Sunghoon Jung

Peyman Talebi Fard

Sungduck Chun

Hyuekjae Lee

Hyoungsuk Jeon

Jihwan Hwang

Taehyeon Kim

Chulyong Cho

Jiseok Hong

Jihwan Suh

Weihua Qiao

Chaejoo Son

Kyujin Kim

Daewook Byun

Jihoon Kim

Ki-Dong Lee

Bokyung Byun

Jian Xu

Hongsuk Kim

Hyunjung Choe

Hee-Bong Kim

Jaeneung Lee

Byungmin Woo

Moonsoo Chung

Jae Neung Lee

Sang Cheon Park

Sangcheon Park

Doohee Hwang

Hua Zhou

Dongsoo Kim

Sangwook Han

Wookyu Sang

Bongyong Lee

Sunchul Kim

Pyoungwan Kim

Yunjung Yi

Sangwon Kim

Sanghoon Lee

Seokjung Kim

Un-Byoung Kang

Jongho Lee

Kyunghwan Lee

Yongseok Kim

Jisu Kim

Jinhwan Kim

Unbyoung Kang

Jaehun Jung

Kyungsuk Oh

Jieun Park

Ji-seok Hong

Se-Ho You

Hyunyong Choi

Seungjin Yoo

Dae-Woo Kim

Hanbyul Seo

Hyukjin Chae

Jonghwan Kim

Kohji Kanamori

Sanghoon Kim

Satoru Yamada

Jinhong Kim

Changhee Lee

Minho Kim

Changsoo Lee

Soichiro Mizusaki

Seyun Kim

Chulki Kim

Gwanmo Ku

Jinyoung Choi

Taikjin Lee

Byeongseong So

Doyoon Kim

Jaeho Hong

Sunghun Kim

Jeongyoon Rhee

Taehyung Lee

Gyoosang Choi

Hajin Kim

Jaehun Kim

Haengdeog Koh

Younhwa Choi

Hyunjoo Jeon

DaeSeok Oh

Dongmyung Shin

Hiesang Sohn

Jungjoon Lee

Minhun Kang

A vertical non-volatile memory device includes: a memory stack structure including gate lines and interlayer insulating layers and a channel hole extending in a stacking direction; a channel layer in the channel hole and extending in the stacking direction; and an information storage structure including a composite blocking insulating layer, a charge storage layer, and a tunneling insulating layer sequentially arranged in a horizontal direction from the gate lines to the channel layer, wherein the composite blocking insulating layer includes a metal oxide having a higher dielectric constant than silicon oxide, and the composite blocking insulating layer includes a first blocking insulating layer on sides of the gate lines and a second blocking insulating layer that is between the first blocking insulating layer and the charge storage layer and has a lower oxidation density than the first blocking insulating layer.

Vertical non-volatile memory devices

Disclosed are a display panel having a large area, high resolution, a narrow bezel, low power consumption, and having reduced Resistance Capacitance (RC) delay, and a display device including the same. The display panel includes an Active Area Gate-In-Panel (AAGIP) disposed between adjacent pixel blocks, wherein the AAGIP unit is configured to: connect an n scan line disposed in and along sub-pixels of an n-th row of the pixel block on one side of the AAGIP unit and an n scan line disposed in and along sub-pixels of an (n+1)-th row of the pixel block on the other side thereof to each other; and connect an n+1 scan line disposed in and along sub-pixels of an (n+1)-th row of the pixel block on one side thereof and an n+1 scan line disposed in and along sub-pixels of an n-th row of the pixel block on the other side thereof to each other. Thus, defect such as crosstalk or smear caused by data line transition is reduced.

Display panel having each active area gate-in-panel (AAGIP) unit disposed between adjacent ones of the plurality of pixel blocks and display device including the same

The present disclosure relates to a method for performing vehicle position recognition using a geomagnetic sensor by calibrating the geomagnetic sensor on the basis of a geomagnetic sensor value stored in a database in advance before entrance to an area in which position recognition through a GPS is impossible. Thus, it is possible to accurately detect a position of a vehicle using the geomagnetic sensor even in a structure such as a tunnel.

Method for recognizing vehicle location using geomagnetic sensor

Provided are electronic devices and methods for power reduction in systems with multiple memory ranks. The electronic device includes a memory system including first and second memory ranks and a memory controller connected to the memory system and configured to control power of the memory system. The memory controller being configured to cause the first memory rank to enter an idle power down (IPD) state during memory access in which a data toggle time without a data bubble is equal to or greater than an IPD minimum gain duration in another bank access for the second memory rank.

Power reduction for systems having multiple ranks of memory

A ventilating apparatus includes a panel, a motor, a circuit assembly, and the apparatus stops an operation of the motor and notify a user when the panel is opened independently of a specific driving condition. The circuit assembly includes a switch which is closed when the panel is coupled to a body, and opened when at least a part of the panel is separated from the body, a motor of which an operation is stopped when the switch is opened, and a microcomputer which is connected to the switch and outputs a notification signal in response to the opening of the switch.

Ventilating apparatus, circuit assembly and control method of the same

A display device includes a pixel circuit connected to a light emitting element. The pixel circuit includes a driving transistor having a gate electrode, a source electrode, and a drain electrode, and a capacitor connected with the gate electrode. The pixel circuit is driven according to a first period when a reference voltage is applied to the gate electrode, a second period when a gate-source voltage difference of the driving transistor is a threshold voltage of the driving transistor, a third period when the reference voltage is applied to the capacitor, and a voltage of the gate electrode varies due to a coupling phenomenon of the capacitor, a fourth period when a high-potential voltage higher than the reference voltage is applied to the source electrode, and a fifth period when the driving transistor is turned on to cause the light emitting element to emit light.

Display device

A semiconductor package includes a redistribution substrate, a first memory chip provided on the redistribution substrate, the first memory chip comprising a first base layer, a first circuit layer provided on a top surface of the first base layer, and a first via penetrating the first base layer and connected to the first circuit layer and the redistribution substrate, a logic chip provided on the first memory chip, and a first molding layer surrounding the first memory chip. An outer side surface of the first molding layer is coplanar with a side surface of the logic chip. At an interface of the logic chip and the first memory chip, a first chip pad provided in the first circuit layer of the first memory chip and a second chip pad of the logic chip are formed of the same material and constitute one body.

Semiconductor package

Disclosed is a cooking apparatus including a cooking chamber and, being open in a first direction, a shelf insertable into the cooking chamber in the first direction and including a container, and a magnetron to generate a high frequency to be supplied to the shelf, wherein the shelf includes a heat generating member to generate heat by the high frequency generated from the magnetron, the container includes a first container disposed on one side in a second direction orthogonal to the first direction, a second container disposed on the other side in the second direction, and a holder to detachably support the first and second containers, the heat generating member includes a first heat generating member disposed on the first container to provide heat to the first container, and a second heat generating member disposed on the second container to provide heat to the second container.

Cooking apparatus

A cooking appliance including a cooking chamber configured to cook food therein and openable in a first direction, a shelf provided to be inserted into the cooking chamber in the first direction and having a cooking surface on which food is placed, a magnetron configured to generate high frequency waves to be supplied to the shelf, and a heat generating member configured to generate heat by the high frequency waves generated by the magnetron. Where the cooking surface includes a first area on one side and a second area on another side, the heat generating member includes a first heat generating portion configured to supply heat to the first area and a second heat generating portion disposed to correspond to the second area, and the first heat generating portion supplies more heat to the first area than the second heat generating portion supplies to the second area.

Cooking appliance

A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Semiconductor devices and data storage systems including the same

A display device can include a light emitting element and a pixel circuit including a driving transistor; a first capacitor connected between the driving transistor and a first node; a first transistor connected between the first capacitor and a data line to operate based on a first scan signal; a first light emission transistor connected between the first capacitor and a reference voltage line to operate based on a light emission signal; and a second light emission transistor connected between the driving transistor and a low-potential voltage line to operate based on the light emission signal. The first scan signal sequentially includes a dummy scan signal section and driving scan signal section for turning on the first transistor, and the light emission signal includes a coupling period for turning on the first and second light emission transistors between the dummy scan signal section and the driving scan signal section.

An electromagnetic wave shielding film having: a base substrate; and an electromagnetic wave shielding layer disposed on the base substrate, where the thickness of the electromagnetic wave shielding layer is 1 nm to 50 nm. In addition, the shielding layer includes: a first layer on the base substrate; a second layer on the first layer; and a third layer on the second layer, wherein the first layer, the second layer, and the third layer include copper sulfide.

Electromagnetic wave shielding film, and method for manufacturing same

A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

Packaged multi-chip semiconductor devices and methods of fabricating same

Cradle for mobile device

A method for performing vehicle-to-everything (V2X) communication in a wireless communication system and a device for same are disclosed. Particularly, a method for a user equipment (UE) performing V2X communication with a PC5 interface in a wireless communication system includes: receiving from an upper layer a request for transmitting a V2X message; requesting radio resources, for V2X communication with a PC5 interface, to a base station or selecting radio resources for V2X communication with the PC5 interface; and performing transmission of V2X communication with the PC5 interface, wherein, if a UE has emergency packet data network (PDN) connection, an indication, indicating that transmission with the emergency PDN connection is a higher priority than the V2X communication with the PC5 interface, can be transmitted from the upper layer.

Method for performing V2X communication in wireless communication system and device for same

Growing community of inventors

Seoul, South Korea

Taehun Kim