Average Co-Inventor Count = 4.52
ph-index = 5
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Qualcomm Incorporated (12 from 41,326 patents)
2. Samsung Electronics Co., Ltd. (6 from 131,214 patents)
3. Yonsei University (6 from 1,333 patents)
4. Qualcomm Technologies, Inc. (2 from 159 patents)
5. Industry-academic Cooperation Foundation (2 from 21 patents)
20 patents:
1. 11475948 - Memory device and operating method of memory device
2. 11127457 - Memory device with reduced read disturbance and method of operating the memory device
3. 11100990 - Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof
4. 11100959 - Variable resistance memory device
5. 11011228 - Memory device having an increased sensing margin
6. 10998038 - Memory device and method of operating the same
7. 10263645 - Error correction and decoding
8. 9852783 - Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages
9. 9800271 - Error correction and decoding
10. 9728259 - Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin
11. 9691462 - Latch offset cancelation for magnetoresistive random access memory
12. 9666259 - Dual mode sensing scheme
13. 9502088 - Constant sensing current for reading resistive memory
14. 9502091 - Sensing circuit for resistive memory cells
15. 9406354 - System, apparatus, and method for an offset cancelling single ended sensing circuit