Samsung Electronics Co., Ltd.

Taehan Kim

Minkyung Choi

Cheolyeon Jo

Yeaseul You

Hyunsoo Kim

Suhyun Yoo

Seungmok Lee

Young-Sun Shin

Bumsuk Kim

Jinsun Park

Yunki Lee

Yuna Park

Sodam Park

Kyungho Lee

Kwanghee Lee

Eunsub Shim

Masato Fujita

Dongmin Keum

Jaeyong Shin

Jaeho Choi

Youngsun Shin

Jihyeoung Lee

Junsung Park

Yeaju Jang

Cheonho Park

Jungsaeng Kim

Air purifier

An image sensor includes a pixel array including a plurality of pixels arranged in directions, parallel to an upper surface of a substrate, each of the plurality of pixels including at least one photodiode, a color filter above the at least one photodiode, and a pixel circuit below the at least one photodiode, and a logic circuit configured to obtain a pixel signal from the plurality of pixels. The plurality of pixels include red pixels each having a red color filter, green pixels each having a green color filter, and blue pixels each having a blue color filter, and a size of a first red color filter included in a first red pixel, disposed in a first area separated by a first distance from a center of the pixel array, is greater than a size of a second red color filter included in a second red pixel, disposed in a second area separated from the center of the pixel array by a second distance, greater than the first distance.

Image sensor having different-sized color filters

An image sensor includes a pixel array in which a plurality of normal pixels and a plurality of autofocus (AF) pixels are disposed, and a logic circuit. The logic circuit provides an autofocus function using a phase difference between pixel signals obtained from each of the plurality of AF pixels. Each of the AF pixels includes a single AF lens disposed on a pair of pixel areas. An AF lens of the AF pixel spaced apart from a center of the pixel array may have an area larger than an area of the AF lens of the AF pixel adjacent to the center.

Image sensor with size-variable autofocus lenses

Grille for air purifier

An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

Image sensor

Growing community of inventors

Seoul, South Korea

Taehan Kim