Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Taegon Kim

Kyungin Choi

Hyunchul Song

Taehyeon Kim

Seungyeon Kwak

Sunghun Lee

Jiwhan Kim

Sunjung Kim

Seong Hoon Jeong

Yuichiro Sasaki

Jaeyoung Park

Hongshik Shin

Wandon Kim

Jongsoo Kim

Deukseok Chung

Hanmei Choi

Geunwoo Kim

Heonbok Lee

Hanki Lee

Yoontae Hwang

Yongho Lee

Youngkyoung Kim

Hyojin Won

Hyeyoung Hong

Hyeonho Choi

Ki-chul Kim

Jonggil Pyo

Hoyoung Kim

Joonghyuk Kim

Sungho Kang

Joon-Young Choi

Changhwa Kim

JungHun Lee

Sihyung Lee

Yongchul Kim

Bongjin Kuh

Taewook Kim

Jong-Hoon Kang

Kwanghyun Ahn

Seokhun Na

Shinae Jun

Yoonsu Kim

Seungmo Kang

Joonghan Shin

Juri Lee

JunHyun Cho

Sangeui Lee

Eunyoung Jo

Gonsu Kang

Sungho Heo

Hyeonwoo Lee

Kwangho Ko

A display apparatus including a substrate including at least one blue light-emitting unit, and a color control portion provided on the substrate and configured to control a color of a light generated at the substrate, wherein the color control portion includes a first color control element, wherein the first color control element includes a first quantum dot for a green color conversion, the at least one blue light-emitting unit includes an emission layer, wherein the emission layer includes a host, a first dopant, and a second dopant, and wherein the display apparatus further satisfies conditions as defined herein.

Display apparatus and electronic apparatus including the same

A display device may include: a display panel; a frame to which the display panel is coupled; a roller extending along one side of the display panel; a cover unwound from or wound around the roller; a bar which is positioned behind the display panel, to which one end of the cover is fixed, and which is movably coupled to the frame; a pair of reels which opposite each other with respect to the roller; a driving assembly which rotates the pair of reels; and a pair of wires which are wound around or unwound from the pair of reels, and which are fixed to the bar, wherein the reel may include a groove which is formed in a helix shape on an outer circumferential surface of the reel, and around which the wire is wound or from which the wire is unwound.

Display device having a transparent display panel and frame to which the display panel is coupled

An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain region. The source/drain region includes a lower source/drain region and an upper source/drain region. The lower source/drain region includes at least one silicon isotope selected from silicon isotopes ofSi,Si, andSi, and the upper source/drain region includes aSi element at a content higher than a content of theSi element in the lower source/drain region.

Integrated circuit devices

Disclosed is a display device. The display device of the present disclosure may include: a display panel; a plate disposed at a rear of the display panel, and coupled to the display panel; a frame disposed at a rear of the plate; and a mount plate disposed at a rear of the frame, wherein the plate may include a fixing part protruding rearward from a rear surface of the plate, passing through the frame, and coupled to the mount plate.

Display device

A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.

Method of fabricating a semiconductor device

A semiconductor device including a substrate; a fin active region on the substrate and extending in a first direction; a gate structure extending across the fin active region and extending in a second direction; a source/drain region in the fin active region on a side of the gate structure; an insulating structure covering the gate structure and the source/drain region; and contact structures penetrating through the insulating structure and respectively connected to the source/drain region and the gate structure, wherein one of the contact structures includes a seed layer on the gate structure or the source/drain regions and including lower and upper regions, the lower region having a first grain size and the upper region being amorphous or having a grain size different from the first grain size, and a contact plug on an upper region of the seed layer and having a second grain size.

Method of manufacturing a semiconductor device

Semiconductor device

A display device according to the present invention comprises: a display module curved in a forward-and-backward direction; a middle module curved to be coupled to a rear side of the display module; and a back module curved to be coupled to a rear side of the middle module, wherein the middle module comprises a plurality of coupling parts arranged spaced apart from each other along a curved direction of the middle module, the back module comprises a plurality of coupling counterparts, which are coupled to the plurality of coupling parts, respectively, and among the plurality of coupling parts and the plurality of coupling counterparts, one is a plurality of protrusion parts protruding in parallel with each other, and the other one is a plurality of hook parts which engage with the plurality of protrusion parts, respectively.

Semiconductor device including a densified device isolation layer

A method of fabricating a semiconductor device includes pattering an upper portion of a substrate to form a first active pattern, the substrate including a semiconductor element having a first lattice constant, performing a selective epitaxial growth process on an upper portion of the first active pattern to form a first source/drain region, doping the first source/drain region with gallium, performing an annealing process on the first source/drain region doped with gallium, and forming a first contact pattern coupled to the first source/drain region. The first source/drain region includes a semiconductor element having a second lattice constant larger than the first lattice constant.

Method of fabricating semiconductor device

A display apparatus includes a light-source substrate portion which generates light; and a color control portion to which the generated light from the light-source substrate portion is incident and at which color of the generated light is adjusted to define a color-converted light having a color different from that of the generated light. The color control portion includes: an exit surface through which the color-converted light exits the color control portion; a substrate including a plurality of concave portions defined therein, each of the concave portions extended along a direction from the light-source substrate portion to the exit surface of the color control portion; and a plurality of color conversion members respectively in the plurality of concave portions, the color conversion members each including a color-converting material which converts the color of the generated light to the color of the color-converted light.

Display apparatus and method of manufacturing the same

Semiconductor device including patterns and layers having different helium concentrations and method of fabricating the same

A display device is disclosed. The display device includes a display panel, a module cover positioned at a rear of the display panel and coupled to the display panel, a plate positioned at a rear of the module cover, an adhesive member attached to at least a part of a front surface of the plate, a bracket positioned between the module cover and the plate and attached to the adhesive member, and a coupling unit positioned between the module cover and the bracket and fixing the module cover to the bracket.

Growing community of inventors

Seoul, South Korea

Taegon Kim