Lg Innotek Co., Ltd.

Medison Co., Ltd.

Samsung Medison Co., Ltd.

Tae Yun Kim

Hyo Kun Son

Moo Ho Bae

Jin Yong Lee

Kurt Sandstrom

Seong Ho Song

Sung Bae Park

Disclosed is a light emitting device. A light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Light emitting device having undoped GaN layer

A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.

Semiconductor light emitting device and method for manufacturing the same

Light emitting device

Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor.

Ultrasound color Doppler imaging system and method for filtering clutter signal of the same

Disclosed are a light emitting device. A light emitting diode comprises a light emitting device comprises a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on the second N-type semiconductor layer, and a P-type semiconductor layer on the active layer, wherein the first N-type semiconductor layer comprises a Si doped Nitride layer and the second N-type semiconductor layer comprises a Si doped Nitride layer, and wherein the first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to output a plurality of ultrasound data corresponding to each pixel of a color Doppler mode image; and a processing unit in communication with the ultrasound data acquisition unit and being configured to calculate a power difference value corresponding to each of the pixels based on the plurality of ultrasound data, determine whether the power difference value is equal to or larger than a first threshold value, and if the power difference value is equal to or larger than the first threshold value, then perform first clutter filtering upon the plurality of ultrasound data, or if the power difference value is less than the first threshold value, then perform second clutter filtering upon the plurality of ultrasound data.

Adaptively performing clutter filtering in an ultrasound system

Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and a filler filling the trench.

Light emitting device package and method for fabricating the same

Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to thereby output a plurality of ultrasound data for obtaining a color Doppler mode image, wherein the target object includes at least one of a tissue and a blood flow; and a processing unit placed in communication with the ultrasound data acquisition unit and being configured to locate the plurality of ultrasound data on a complex plane, the processing unit being further configured to perform a circle fitting upon the plurality of ultrasound data located on the complex plane and perform a downmixing and a clutter filtering upon the circle-fitted ultrasound data in consideration of speed of the tissue.

Ultrasound system and method for adaptively performing clutter filtering

Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Semiconductor light emitting device having plural active layer cycles and electron barrier energy band gaps

A semiconductor light emitting device includes an active layer; a first nitride semiconductor layer on the active layer; a first delta-doped layer on the first nitride semiconductor layer; a second nitride semiconductor layer on the first delta-doped layer; a second delta-doped layer on the second nitride semiconductor layer; a third nitride semiconductor layer on the second delta-doped layer. The first delta-doped layer, the second nitride semiconductor layer, the second delta-doped layer, and the third nitride semiconductor layer are doped with an n-type dopant.

Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.

Nitride semiconductor light-emitting device and method for manufacturing the same

Examples for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. The signal processing unit processes received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. A region of interest (ROI) is set on the 2-dimensional image of the target object, The signal processing unit obtains a Doppler mode image pixel data corresponding to the ROI. The signal processing unit sets filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered.

Clutter signal filtering in an ultrasound system

Embodiments for setting eigenvectors for clutter signal filtering from Doppler signals in an ultrasound system are disclosed. In one embodiment, the ultrasound system includes: a Doppler signal acquisition unit configured to transmit and receive ultrasound signals to and from a target object to acquire first Doppler signals; and a processing unit configured to compute a plurality of eigenvectors by using the first Doppler signals and form second Doppler signals corresponding to directions of the computed eigenvectors, the processing unit being further configured to compute component values of the second Doppler signals and set eigenvectors for clutter signal filtering among the plurality of eigenvectors by using the computed component values.

Clutter signal filtering using eigenvectors in an ultrasound system

A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Growing community of inventors

Gwangju, South Korea

Tae Yun Kim