Samsung Electronics Co., Ltd.

Hyundai Mobis Co., Ltd.

Tae Young Park

Tae Hun Kim

Pun Jae Choi

Wan Tae Lim

Hyuk Woo

Tae Sung Jang

Ju Hwan Lee

Young Soo Park

Yung Ho Ryu

Sung Joon Kim

Tae Yang Kim

Wan Ho Lee

Min Gi Kang

Young Kyu Sung

Jin Gi Hong

Seon Hyeong Jo

Seong Hwan Yun

A power semiconductor device includes a plurality of gate electrodes configured to be recessed from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate, the second surface being opposite to the first surface, an emitter region configured to make contact with a trench and the first surface, being provided between respective ones of the plurality of gate electrodes, and including impurities of a first conductive type, a collector region configured to make contact with the second surface, and including second impurities of a second conductive type opposite to the first conductive type, a floating region extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and including the second impurities, and a trench emitter region interposed between the plurality of gate electrodes in the trench.

Power semiconductor device, power semiconductor chip including the same, and method for manufacturing the same

A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

Semiconductor light-emitting device

According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.

Method for forming electrode of n-type nitride semiconductor, nitride semiconductor device, and manufacturing method thereof

Growing community of inventors

Yongin-si, South Korea

Tae Young Park