Skhynix Inc.

Toshiba Memory Corporation

Tae-Young Lee

Jae-Hyoung Lee

Jong-Koo Lim

Ku-Youl Jung

Jeong-Myeong Kim

Eiji Kitagawa

Sang-Ho Lim

Sung-Woong Chung

Seong-Rae Lee

Dong-Su Son

An electronic device may include a semiconductor memory, and the semiconductor memory may include a variable resistance element including a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; a first protective layer disposed on a lower sidewall of the variable resistance element; and a second protective layer disposed on an upper sidewall of the variable resistance element, wherein any one layer of the first protective layer and the second protective layer may apply a compressive stress to the variable resistance element, and the other layer applies a tensile stress to the variable resistance element.

Method of making magnetic tunnel junction memory device with stress inducing layers

An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]or [x/Ru], x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.

Electronic device

Magnetic tunnel junction memory device with stress inducing layers

A multilayer thin film for magnetic random access memory that includes thin platinum layers and thin cobalt-copper layers, and more particularly, to a multilayer thin film having magnetic layers including non-magnetic material copper that replaces a portion of the magnetic material cobalt.

Platinum and cobalt/copper-based multilayer thin film having low saturation magnetization and fabrication method thereof

An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein the free layer may include a first magnetic layer; a second magnetic layer formed over the first magnetic layer; and a Zirconium (Zr)-containing material layer interposed between the first magnetic layer and the second magnetic layer.

This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and the semiconductor memory includes a variable resistance structure including a material having a resistance that is changed by formation or dissipation of conductive filaments; and a Magnetic Tunnel Junction (MTJ) structure inserted in the variable resistance structure and comprising a first magnetic layer having a pinned magnetization direction, a second magnetic layer having a variable magnetization direction, and a tunnel dielectric layer interposed between the first magnetic layer and the second magnetic layer.

Growing community of inventors

Icheon-si, South Korea

Tae-Young Lee