Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Yonsei University

Other

Robert Boschgmbh

Korea University Research and Business Foundation

Gwangju Institute of Science and Technology

Hyundai Motor Company

Electronics and Telecommunications Research Institute

Samsung Electro-mechanics Co., Ltd.

Purdue Research Foundation

Sungkyunkwan University

Korea Electronics Technology Institute

Hanwha Techwin Co., Ltd.

Hewlett-packard Development Company, L.P.

Tae-young Kim

Ji-Yun Seol

Su-Ryong Jeong

Hyun-Kyu Yu

Keon-Kook Lee

Jeong-ho Park

Hyun-Il Yoo

Jee-Hwan Noh

Chan-Hong Kim

Dong-min Im

Gi-Gwan Park

Min-sik Park

Dong-joon Lee

Sang-bok Ma

Duck-young Yoo

Jae-Seung Son

Jae-hoon Lee

Victor Roev

Jae-myung Lee

Young-sin Park

Seung-wook Baek

Kwang-il Park

Yong-Seok Kim

Young-Soo Sohn

Sung-Il Chang

Su-Jin Ahn

Shuangfeng Han

Jun-Hee Lim

Jung-ock Park

Jae-Sung Sim

Min-young Kim

Sei-jin Kim

Pil-won Heo

Woo-young Shim

Dong-Suk Shin

Chul-woo Park

Chang-soo Park

Dongku Kang

Myung-dong Cho

In-Young Lee

Hyoung-il Kim

Sang-Kyun Kang

Sang-Hoon Choi

Suk-gi Hong

Sang-jin Choi

Dong-Hyuk Kim

Jong Ryang Kim

Jae-il Chung

Yeo-Hun Yun

Ji-young Byun

Kyeong-Yeon Kim

Young-Han Nam

Ki-Hyun Kim

Kitae Park

Cheol Mo Jeong

Ki-Tae Park

Jae-Yong Jeong

Myung-Chul Kim

In-Kyu Kim

Sang-Gyun Woo

Seung-Bum Kim

Shi-Dong Park

Gi-Sung Yeo

Min Sagong

Myung-jin Lee

Han-Ku Cho

Seong-woo Choi

In-Kyu You

Min-Seok Kim

Joon-Young Choi

David James Love

Dae-hee Kim

Sung-Nam Hong

Hee-young Sun

Hyun-Ye Lee

In Gyoo Kim

Moosung Kim

Byungju Lee

Yoon-jae Lee

Byeong-Soo Kim

Dong Ku Kang

Byonghyo Shim

Youngho Lim

Joon-Soo Park

Yong-Ho Cho

Jae-Bong Lim

Ohsuk Kwon

Byung-Moo Lee

Su-Min Lee

Jae-Duk Yu

Won-sung Choi

Dong-kyo Shim

Ming Hoka

Kyung-jung Kwon

Young Ho Lim

Yong-Ho You

Jong-Heun Lee

Seong-ho Shin

Jaewoo Im

Ho-bin Hwang

A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

Semiconductor device with a fin-shaped active region and a gate electrode

Proposed are a layered compound having indium and arsenic, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] NaInAs(0&#x2264;x&#x3c;1.0, 0.8&#x2264;y&#x2264;1.2, 1.2&#x2264;z&#x2264;1.8).

Layered compound and nanosheet containing indium and arsenic, and electrical device using the same

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] MAB(M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x), and having ferroelectric-like properties.

Layered group III-V compound including additive elements and having ferroelectric-like properties, and nanosheet using the same

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0&#x3c;m&#x3c;x).

Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same

A lighting device equipped at all times in a vehicle, which can be used for camping and leisure and has a function of a safety warning light of the vehicle, according to the present invention, comprises: a rectangular-shaped fixing plate having a pair of first magnet members which are disposed horizontally; a 'C'-shaped front insertion groove which is formed on the front surface of the fixing plate and is formed to be adjacent to the edges of the fixing plate excluding the upper or lower edge of the fixing plate; a 'C'-shaped first support member which is selectively fixed to the front insertion groove and is installed rotatably toward the front surface with respect to the fixing plate by the medium of a hinge; a pair of side surface insertion grooves which are longitudinally formed on the respective sides of the fixing plate; a pair of second support members which are respectively coupled to the inside of the side surface insertion grooves by the medium of a hinge, and are unfolded in a direction opposite to the first support member; a light unit which has, on the rear surface thereof, a second magnet member coupled to the first magnet members, has a battery embedded therein, and has a lighting device on the front surface thereof; and a cover which is rotatably coupled to the light unit by the medium of a hinge so as to selectively cover the lighting device, wherein the lighting device may flicker when the lighting device is covered by the cover.

Lighting device which can be used for camping and leisure and has vehicle safety warning light and fire detection functions

Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.

Method of fabricating semiconductor device

In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

Vertical semiconductor devices and methods of manufacturing the same

The present invention relates to a polylactic acid resin composition and a molded product using same. Since the polylactic acid resin composition according to the present invention has excellent environmental friendliness and biodegradability, has excellent heat resistance characteristics due to high heat deformation temperature (HDT), and may be injection molded within a commercially reasonable cycle time due to high crystallinity and crystallization rate, it is suitable for the preparation of a molded product.

Poly(lactic acid) resin composition and molded product comprising same

The present disclosure relates 5G or pre-5G communication systems for supporting higher data transmission rate than those by LTE or other post-4G communication systems. According to the present disclosure, a method for operating a beamformed reference signal by a base station and terminal in a communication system, and the terminal, are provided. The method includes transmitting, to a terminal, control information indicating whether a first codebook is used for generating feedback information on a downlink reference signal. The first codebook is used if generating feedback information on the beamformed reference signal and is generated based on a number of antenna ports and a number of ranks.

Method and apparatus for operating beamformed reference signal in communication system

A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

Memory device that performs internal copy operation

A method for preparing a three-dimensional graphene structure, and an energy storage device are provided, the method including forming a graphene precursor by heating a carbohydrate and a gas generator, forming a graphene structure having a cavity therein by carbonizing the graphene precursor, and forming nanopores in the graphene structure, wherein the nanopores pass through an outer surface and an inner surface of the graphene structure, and are connected with the cavity.

Method for preparing three-dimensional graphene structure and energy storage device

A metal-air battery including: a negative electrode metal layer; a negative electrode electrolyte layer disposed on the negative electrode metal layer; a positive electrode layer disposed on the negative electrode electrolyte layer, the positive electrode layer comprising a positive electrode material which is capable of using oxygen as an active material; and a gas diffusion layer disposed on the positive electrode layer, wherein the negative electrode electrolyte layer is between the negative electrode metal layer and the positive electrode layer; wherein the negative electrode metal layer, the negative electrode electrolyte layer, and the positive electrode layer are disposed on the gas diffusion layer so that the positive electrode layer contacts a lower surface and an opposite upper surface of the gas diffusion layer, and wherein one side surface of the gas diffusion layer is exposed to an outside.

Metal-air battery having folded structure and method of manufacturing the same

The present disclosure relates to transmitting and receiving beam information in a wireless communication system. An operation of a receiving end includes: generating a signal indicating two or more analogue transmission beams which are allocable to the receiving end; and transmitting the signal. In addition, the present disclosure includes other embodiments different from the embodiment described above.

Apparatus and method for transmitting and receiving beam information in wireless communication system

Growing community of inventors

Seoul, South Korea

Tae-young Kim