Samsung Electronics Co., Ltd.

Tae-Yoon Yook

Jung Hwan Lee

Dong-Joo Bae

Kyu Hyun Choi

Heyung-Sub Lee

Method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a polycrystalline silicon layer for a resistor area over a silicon semiconductor substrate; a second step for growing a first thermal oxide layer having a first specified depth over the polycrystalline silicon layer, ion-implanting with the nitrogen thereon, and growing a second thermal oxide layer having a second specified depth on the ion-implanted layer; a third step for forming a resistor pattern of the polycrystalline silicon with a photo etching method; and a fourth step for ion-implanting impurities in order to decrease the resistance of the polycrystalline silicon as contact regions to be used in resistance contacts with a fixed semiconductor region on the substrate.

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Suwon, South Korea

Tae-Yoon Yook