Amkor Technology Singapore Holding Pte. Ltd.

Amkor Technology, Inc.

Samsung Electronics Co., Ltd.

Tae Yong Lee

Kyoung Yeon Lee

Yi Seul Han

Ji Yeon Ryu

Jae Min Bae

Jin Young Khim

Doo Soub Shin

Jae Beom Shim

Hyung Jun Cho

Sung Gyu Kim

Euy Sung Chu

Kyeong Tae Kim

Ji Young Chung

Ju Young Kim

Ju Hoon Yoon

Seung Won Oh

Nak Hyun Kim

Ho Jeong Lim

Kwang Woong Ahn

Won Chul Do

Jun Hwa Lee

Hyeong Joon Seo

Woo Seog Song

Moon Sun Shin

Ron Huemoeller

Shaun Bowers

Ji Hun Yi

Won Choe

Sang Ho Shin

Jee Ho Park

Cheol Ho Lee

Jeong Kyo Oh

Woo Bin Jung

Min Won Park

Seon A Lee

Byong Jin Kim

Jae Yoon Kim

Young Suk Chung

Byung Yul So

Se Man Oh

Eun Jae Lee

Min Chul Shin

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising one or more conductive shielding members and an EMI shielding layer, and a method of manufacturing thereof.

Semiconductor device and method of manufacturing thereof

In one example, a semiconductor device comprises a substrate having a top surface and a bottom surface, an electronic device on the bottom surface of the substrate, a leadframe on the bottom surface of the substrate, the leadframe comprising a paddle, wherein the paddle is coupled to the electronic device, and a lead electrically coupled to the electronic device. The semiconductor device further comprises a first protective material contacting the bottom surface of the substrate and a side surface of the electronic device.

Semiconductor device including heat sink with exposed side from encapsulant and a method of manufacturing thereof

In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.

Semiconductor package with EMI shield and fabricating method thereof

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a stackable semiconductor device with small size and fine pitch and a method of manufacturing thereof.

Semiconductor device and manufacturing method thereof

An electronic device includes a substrate comprising outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect.

Semiconductor devices and methods of manufacturing semiconductor devices

In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

Disclosed is an air cleaner having independent fluid paths and a home appliance having the air cleaner. The air cleaner includes a front panel having a plurality of air inlets formed thereon for air to flow in from outside of the case, first and second blower devices arranged inside the case to allow air to flow in through the plurality of air inlets, first and second filter units arranged to filter the air flowing in by the first and second blower devices, a first outlet located on the case to release the air, a second outlet formed at a different location from that of the first outlet, a first fluid path formed between one of the plurality of air inlets and the first outlet; and a second fluid path formed between another of the plurality of air inlets and the second outlet.

Air cleaner and home appliance having air processing unit

Semiconductor device and a method of manufacturing a semiconductor device

A semiconductor device can comprise a substrate dielectric structure and a substrate conductive structure that traverses the substrate dielectric structure and comprises first and second substrate terminals; an electronic component with a component terminal coupled to the first substrate terminal; and a first antenna element with a first element terminal coupled to the second substrate terminal, a first element head side adjacent a first antenna pattern, a first element base side opposite the first element side, and a first element sidewall. The first element terminal can be exposed from the first element dielectric structure at the first element base side or at the first element sidewall. The first antenna pattern can be coupled to the substrate through the first element terminal. The substrate conductive structure can couple the first antenna element to the electronic component. Other examples and methods are also disclosed.

In one example, an electronic device includes a substrate comprising a substrate top side, a substrate bottom side, and outward terminals. An electronic component is connected to the outward terminals. External interconnects are connected to the outward terminals and include a first external interconnect connected to a first outward terminal. A lower shield is adjacent to the substrate bottom side and is laterally between the external interconnects. The lower shield is electrically isolated from the first external interconnect by one or more of 1) a dielectric buffer interposed between the lower shield and the first external interconnect; or 2) the lower shield including a first part and a second part, the first part being laterally separated from the second part by a first gap, wherein the first part laterally surrounds lateral sides of the first external interconnect; and the second part is vertically interposed between the first outward terminal and the first external interconnect. Other examples and related methods are also disclosed herein.

Growing community of inventors

Gyeonggi-do, South Korea

Tae Yong Lee