Samsung Electronics Co., Ltd.

Tae Yong Bae

Ki Hyun Park

Hak-Sun Lee

Hoon Seok Seo

Doo-Hwan Park

Seong Ho Park

Eun-Chul Seo

Kyoung Pil Park

Integrated circuit devices and methods of forming the same are provided. The methods of forming an integrated circuit device may include forming a first insulating layer and a via contact on a substrate. The substrate may include an upper surface facing the via contact, and the via contact may be in the first insulating layer and may include a lower surface facing the substrate and an upper surface opposite to the lower surface. The methods may also include forming a second insulating layer and a metallic wire on the via contact. The metallic wire may be in the second insulating layer and may include a lower surface that faces the substrate and contacts the upper surface of the via contact. Both the lower surface of the metallic wire and an interface between the metallic wire and the via contact may have a first width in a horizontal direction that is parallel to the upper surface of the substrate.

Integrated circuit devices including enlarged via and fully aligned metal wire and methods of forming the same

A semiconductor device is provided. The semiconductor device includes a first wiring and a second wiring disposed at a first metal level, a third wiring and a fourth wiring disposed at a second metal level different from the first metal level, a first via which directly connects the first wiring and the third wiring, a fifth wiring disposed at a third metal level between the first metal level and the second metal level and connected to the second wiring, and a second via which directly connects the fourth wiring and the fifth wiring.

Semiconductor device and method for fabricating thereof

Growing community of inventors

Seoul, South Korea

Tae Yong Bae