Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Samsung Electro-mechanics Co., Ltd.

Samsung Led Co., Ltd.

Kwangju Institute of Science and Technology

Tae-yeon Seong

June-o Song

Dong-seok Leem

Joon-seop Kwak

Kyoung-kook Kim

Woong-ki Hong

Dong-suk Leem

Hyun-Soo Kim

Jae-Hee Cho

Cheol-soo Sone

Sang-ho Kim

Jae-hee Cho

Ok-hyun Nam

A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer

Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.

Nitride-based light-emitting device and method of manufacturing the same

A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.

Low resistance electrode and compound semiconductor light emitting device including the same

A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

Thin film electrode for high-quality GaN optical devices

Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

Top-emitting nitride-based light emitting device and method of manufacturing the same

Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor. The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same

A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

Light emitting device and method of manufacturing the same

A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.

Flip-chip nitride light emitting device and method of manufacturing thereof

Provided are a reflective electrode and a compound semiconductor light emitting device, such as an LED or an LD, including the same. The reflective electrode, which is formed on a p-type compound semiconductor layer, includes: a first electrode layer forming an ohmic contact with the p-type compound semiconductor layer; a second electrode layer disposed on the first electrode layer and formed of transparent conductive oxide; and a third electrode layer disposed on the second electrode layer and formed of an optical reflective material.

Reflective electrode and compound semiconductor light emitting device including the same

Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

Nitride-based light emitting device and method of manufacturing the same

Nitride-based light-emitting device

A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

Nitride-based light emitting device, and method of manufacturing the same

A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.

Nitride light emitting device and manufacturing method thereof

Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.

Growing community of inventors

Gwangju-si, South Korea

Tae-yeon Seong