Lg Display Co., Ltd.

Tae-Yang Lee

Kyung-Kook Jang

Byung-Geol Kim

Kyu-Nam Kim

Sung-Il Woo

Hee-Yeol Kim

Seul-Gi Choi

Do-Hyung Kim

Jong-Kwan Bin

Wy-Yong Kim

Jin-Wuk Kim

Min-Surk Hyung

Do-hyung Kim

The present disclosure relates to an inorganic light emitting diode (LED) in which an emitting material layer (EML) includes inorganic luminescent particles dispersed in a siloxane matrix, wherein the siloxane matrix has a thickness equal to or less than a thickness of a layer of the inorganic luminescent particles, and an inorganic light emitting device including the inorganic LED. The siloxane matrix allows surface defects of the inorganic luminescent particles to be minimized and to prevent injections of holes and electrons from being delayed. The inorganic LED and the inorganic light emitting device lower their driving voltages and improve their luminous efficiency.

Inorganic light emitting diode and inorganic light emitting device including the same

A quantum-dot (QD) film, which includes a first QD layer including a first QD; and a first protection layer on the first QD layer and including a first organic compound, wherein the first organic compound includes at least two thiol groups, and a first one of the at least two thiol groups is anchored to the first QD, and an LED package, a QD light emitting diode and a display device including the QD film are provided.

Quantum-dot film, LED package, quantum-dot light emitting diode and display device

A quantum dot (QD) light emitting diode comprising first and second electrodes facing each other; a QD emitting material layer between the first and second electrodes; and a semiconducting member acting as a hole transporting path in the QD emitting material layer is provided.

Quantum dot light emitting diode and quantum dot display device including the same

A quantum-dot (QD) light emitting diode and a quantum-dot light emitting display device are disclosed. The QD light emitting diode includes first and second electrodes facing each other; a QD emitting material layer between the first and second electrodes and including a QD; a first charge auxiliary layer between the first electrode and the QD emitting material layer; and a second charge auxiliary layer between the QD emitting material layer and the second electrode, wherein the QD includes a core, a shell surrounding the core and a ligand contacting a portion of the shell, and wherein the first charge auxiliary layer contacts the ligand, and the second charge auxiliary layer contacts the shell.

Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device

A light emitting diode and a light emitting display device are disclosed. The light emitting diode includes a first electrode and a second electrode facing each other; and a hole transporting layer between the first electrode and the second electrode, wherein the hole transporting layer includes an inorganic compound of a chemical formula 1, A:M:M, where the A is a semiconductor nano particle or a nano inorganic particle selected from a metal oxide group, and the Mand Mare different from each other and represent metal positive ions which the A is doped with.

Light emitting diode and light emitting display device including the same

A quantum rod panel includes a first substrate and a second substrate facing each other, a pixel electrode and a common electrode over the first substrate and spaced apart from each other, and a quantum rod layer between the pixel electrode and the common electrode and including quantum rods and metal particles.

Quantum rod panel and quantum rod display device

A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.

Quantum dot, quantum dot film and LED package and display device including the same

Embodiments relate to a quantum rod composition, a quantum rod film, a display device with a quantum rod film, and a method of forming a quantum rod film. The quantum rod film includes a plurality of quantum rods and a polymer with a dipole side chain. Responsive to an external electric field, the major axis of the quantum rods and an axis of the dipole side chain arranges in the same direction. The display device includes a plurality of pixel and common electrodes for generating an electric field, and a backlight unit positioned under a first substrate. Responsive to receiving light from the backlight unit, the quantum rod film emits light polarized in a direction parallel to the major axis of the quantum rods.

Growing community of inventors

Paju-si, South Korea

Tae-Yang Lee