Samsung Mobile Display Co., Ltd.

Postech Academy-industry Foundation

Sn Display Co., Ltd.

Samsung Electronics Co., Ltd.

Seoul National University

Korea Advanced Institute of Science and Technology

Samsung Display Co., Ltd.

Cheil Industries Inc.

Other

Samsung Sdi Co., Inc.

Samsung Dispaly Co., Ltd.

Tae-Woo Lee

Himchan Cho

Mu-Gyeom Kim

Sang-Yeol Kim

Sanghyuk Im

Young-Hoon Kim

Jong-Jin Park

Lyong-Sun Pu

Yu-Jin Kim

Sang-hoon Park

Eun-Sil Han

In-Nam Kang

Jong-jin Park

Dal-Ho Huh

Joon-Yong Park

Myeong-Suk Kim

Younghoon Kim

Tae-yong Noh

O-Ok Park

Masa-aki Kakimoto

Dong-Woo Shin

Mi-Young Chae

Yi-Yeol Lyu

O-Hyun Kwon

Jeong-Woo Lee

Byoung-Ki Choi

Tae-Yong Noh

Byoung-ki Choi

Woon-Jung Paek

Haa-Jin Yang

Young-Kwan Lee

Kwan-Hee Lee

Sungjin Kim

Jin Woo Park

Kwanhee Lee

Jhun-mo Son

Sun-Hee Lee

Myung-Sup Jung

Eui-Su Kang

Won-Jun Song

O-hyun Kwon

Taeyon Lee

Byeong-Soo Bae

Young-Mok Son

Byung-hee Sohn

Wonjun Song

Soo-Hyun Min

Tae Sik Kim

Shinichiro Tamura

Dong-woo Shin

Hee Cheul Choi

Yu-ri Choi

Bon-Won Koo

Byung-hak Lim

Min-Ho Park

Yang-goo Lee

Dong-gun Park

Seon-jun Kim

Miri Choi

Jun-Ho Jang

Sung-Yong Min

Yeong Jun Lee

Seong-Hoon Woo

Sung Yong Min

Seung Hyeon Jo

Sun Jung Byun

Su-Hun Jeong

Jae-Do Nam

Yang-ku Lee

The present invention relates to a light emitting device including a light emitting layer having a stacked structure of two or more layers in which the light emitting layer is alternately disposed with a first light emitting material layer and a second light emitting material layer. In addition, the light-emitting material layer is a perovskite layer or an organic material layer, the first light-emitting material layer and the second light-emitting material layer are characterized in that they have different band gaps. By alternately disposing the first light emitting material layer and the second light emitting material layer to have a stacked structure and by controlling the energy level, there is an advantage in that the electroluminescence efficiency can be improved by controlling the electron-hole recombination region of the light emitting device. In addition, there is an advantage that a white light emitting device can be manufactured by controlling the energy levels of the first light emitting material layer and the second light emitting material layer.

Light-emitting diode comprising perovskite light-emitting layer having layered structure, and method of producing same

Disclosed within is a stretchable organic optoelectronic sensorimotor synapse including: a photodetector triggered by optical signals to generate voltage pulses; and a stretchable organic nanowire synaptic transistor (s-ONWST) driven by the voltage pulses to generate resultant informative synaptic outputs.

Stretchable organic optoelectronic sensorimotor synapse

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

Core-shell structured perovskite nanocrystalline particle light-emitting body, method of preparing the same and light emitting device using the same

Disclosed is a perovskite light-emitting device with reduced defects in a perovskite thin film. The passivation layer in the perovskite light-emitting device is formed on the upper part of the perovskite thin film to eliminate defects in the perovskite nanocrystalline particles and resolve charge imbalance in the device, thereby improving maximum efficiency and maximum luminance of the light-emitting device.

Perovskite light-emitting device having passivation layer and fabrication method thereof

Disclosed are a perovskite color converter and a method for manufacturing the same. In order to maintain strong physical properties, the siloxane resin is synthesized in two steps. The silane precursor performs siloxane bond through a non-aqueous sol-gel reaction to form a siloxane resin, and a bond between methacrylate group, and a bond between methacrylate group and an organic ligand are formed through a secondary cross-linking reaction.

Perovskite color converter and method of manufacturing the same

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Perovskite light-emitting layer and device using the same

Provided are a method for manufacturing a perovskite nanocrystal particle light-emitter where an organic ligand is substituted, a light-emitter manufactured thereby, and a light emitting device using the same. A method for manufacturing an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter where an organic ligand is substituted may comprise the steps of: preparing a solution including an organic-inorganic-hybrid perovskite nanocrystal particle light-emitter, wherein the organic-inorganic-hybrid perovskite nanocrystal particle light-emitter comprises an organic-inorganic-hybrid perovskite nanocrystal structure and a plurality of first organic ligands surrounding the organic-inorganic-hybrid perovskite nanocrystal structure; and adding, to the solution, a second organic ligand which is shorter than the first organic ligands or includes a phenyl group or a fluorine group, thereby substitutes the first organic ligands with the second organic ligand. Thus, since energy transfer or charge injection into the nanocrystal structure increases through ligand substitution, it is possible to further increase light emitting efficiency and increase durability and stability by means of a hydrophobic ligand.

Method for manufacturing perovskite nanocrystal particle light-emitter where organic ligand is substituted, nanocrystal particle light-emitter manufactured thereby, and light emitting device using same

Disclosed are a light emitting device including a perovskite charge transport layer and a method of manufacturing the same. Perovskite thin film of the light emitting device is prepared by co-depositing or sequentially depositing perovskite precursors. Perovskite is directly deposited on the substrate, the thickness of the perovskite thin film is easily controlled, and the energy level is easily adjusted. So, a charge transport layer functioning as a hole injection layer or an electron injection layer in the light emitting device may be manufactured to have suitable energy level.

Light emitting device comprising perovskite charge transport layer and manufacturing method thereof

An image sensor pixel includes a substrate having a pixel electrode on a light receiving surface thereof, and a photoelectric conversion layer including a perovskite material, on the pixel electrode. A transparent electrode is provided on the photoelectric conversion layer, and a vertical electrode is provided, which is electrically connected to the pixel electrode and extends at least partially through the substrate. The photoelectric conversion layer includes a perovskite layer, a first blocking layer extending between the pixel electrode and the perovskite layer, and a second blocking layer extending between the transparent electrode and the perovskite layer. The perovskite material may have a material structure of ABX, ABX, ABX, ABX, ABX, or ABX, where: n is a positive integer in a range from 2 to 6; A includes at least one material selected from a group consisting of Na, K, Rb, Cs and Fr; B includes at least one material selected from a divalent transition metal, a rare earth metal, an alkaline earth metal, Ga, In, Al, Sb, Bi, and Po; and X includes at least one material selected from Cl, Br, and I.

Hybrid image sensors having optical and short-wave infrared pixels integrated therein

Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

Perovskite optoelectronic devices and method for manufacturing same

Perovskite light-emitting device

Provided are a wavelength converting particle, a method for manufacturing a wavelength converting particle, and a light-emitting diode containing a wavelength converting particle. The wavelength converting particle comprises a hybrid OIP nanocrystal that converts a wavelength of light generated by an excitation light source into a specified wavelength. Accordingly, it is possible to optically stabilize and improve color purity and light-emission performance without changes in a light-emitting wavelength range.

Wavelength converting particle, method for manufacturing wavelength converting particle, and light-emitting diode containing wavelength converting particle

Method for manufacturing perovskite particle light-emitter where organic ligand is substituted, particle light-emitter manufactured thereby, and light emitting device using same

Provided are a perovskite light emitting device containing an exciton buffer layer, and a method for manufacturing the same. A light emitting device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a light-emitting layer disposed on the exciton buffer layer and containing a perovskite light-emitter; and a second electrode disposed on the light-emitting layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle light-emitter. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

Perovskite light emitting device containing exciton buffer layer and method for manufacturing same

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for a halide perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising halide perovskite nanoparticles including a perovskite nanocrystal structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Growing community of inventors

Seoul, South Korea

Tae-Woo Lee