Cheil Industries Inc.

Memc Korea Co., Ltd.

Tae Won Park

In Kyung Lee

Hyun Soo Roh

Tae Young Lee

Byoung Ho Choi

Chin Ho Lee

Young Woo Kim

Moon Ro Choi

Jong Seop Kim

Kill Sung Lee

Jongt Seop Kim

Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.

Slurry composition for chemical mechanical polishing and precursor composition thereof

A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same.

Polishing slurry composition and method of using the same

Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2&#x2dc;10 weight % of colloidal silica having an average particle size of 30&#x2dc;80 nm; 0.5&#x2dc;1.5 % by weight of ammonia; 0.2&#x2dc;1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.03&#x2dc;0.5 weight % of a polyoxyethylenealkylamine ether-based nonionic surfactant; 0.01&#x2dc;1 weight % of a quaternary ammonium base and the balance of deionized water.

Slurry composition for secondary polishing of silicon wafer

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Seongnam-si, South Korea

Tae Won Park