Samsung Electronics Co., Ltd.

Tae-won Noh

Bo-soo Kang

Sang-min Shin

Yong-kyun Lee

Jong-gul Yoon

Sang-Don Bu

Bae-ho Park

A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

Ferroelectric capacitor and method for manufacturing the same

A nonvolatile ferroelectric capacitor comprising Bi,A,Ti,O,thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi,Ti,O,. Nonvolatile element A in perovskite layer of B,A,Ti,O,suppress the generation of oxygen vacancies in the perovskite layer, thereby improving fatigue behavior.

Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory

Growing community of inventors

Seoul, South Korea

Tae-won Noh