Seoul National University

Cornell University

Tae Won Noh

Rishi Raj

Albert J Sievers

Jung Hyuk Lee

Jong-Gul Yoon

Jong Gul Yoon

Daesu Lee

Liang Yue

The present invention relates to a ferroelectric memory device having a multilevel polarization (MLP) state generated due to adjustment of a displacement current and to a method for manufacturing the ferroelectric memory device.

Ferroelectric memory device and method for manufacturing same

The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO, (R=Lanthanide) . . . (1)

Multiferroic layer, structure including the layer, and methods of forming the layer and the structure

New composites useful for infrared transmitting applications comprise a dispersion of small particles of diamonds in a matrix having infrared transmission properties (from about 1 to at least 10 .mu.m wavelength) and refractive index substantially similar to that of diamond. The composites exhibit mechanical toughness and durability 2-4 times that of the similarly treated matrix alone without adverse effect on optical properties.

Infra red diamond composites

Growing community of inventors

Seoul, South Korea

Tae Won Noh