Samsung Electronics Co., Ltd.

Navipharm Co., Ltd.

Dream Pharma Corporation

Tae-Won Lee

Do-In Bae

Il-Kyoung Kim

Sung-wook Park

Wan-Goo Hwang

Ki-Young Yun

No-Hyun Huh

Young-Ha Yoon

Tae-Sub Im

Guk-Kwang Kim

Chang-Kyoo Lee

Won-Soon Lee

Sang-Geun Park

Jaung-Joo Kim

Sang-Yeoul Lee

Provided is a composition for preventing or treating osteoporosis. The composition contains an ibandronic acid, or a pharmaceutically acceptable salt thereof, or a hydrate thereof, and vitamin D. The composition has uniform medicinal effects by minimizing the differences in physical properties between ibandronic acid, or the pharmaceutically acceptable salt thereof, or the hydrate thereof, and vitamin D.

Composition for preventing or treating osteoporosis, and manufacturing method therefor

An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.

Ion implanter with etch prevention member(s)

A metal gasket for a semiconductor fabrication chamber capable of preventing base plate metal contamination in the chamber, wherein the metal gasket includes a diffusion barrier layer interposed between a base plate and an anti-corrosive coating layer, and wherein the diffusion barrier layer prevents elements of the base plate from being diffused to the anti-corrosive coating layer. Accordingly, the diffusion barrier layer prevents attack on the anti-corrosive coating layer.

Metal gasket for a semiconductor fabrication chamber

An apparatus for heating a substrate of a semiconductor device includes a hot plate, on which a semiconductor substrate is placed, and a heater for heating the hot plate. The hot plate is preferably a composite plate including a plurality of plates having different thermal conductivities from each other. For example, a first plate adjacent to the heater can be made of aluminum, which has a relatively high thermal conductivity. A second plate, laminated on top of the first plate, can be made of titanium or stainless steel, which both have a thermal conductivity lower than aluminum. A composite hot plate as disclosed herein is better able to maintain a constant temperature and a uniform temperature distribution in order to more uniformly heat a substrate and to reduce an amount of energy required for the heating process. In addition, the reliability and productivity of the semiconductor device manufactured by the apparatus can be improved.

Apparatus for processing a substrate including a heating apparatus

Growing community of inventors

Gyeonggi-do, South Korea

Tae-Won Lee