Dongguk University Industry-academic Cooperation Foundation

Ckd Bio Corp.

Dongguk University

Tae-Won Kang

Hwa-Mok Kim

Kwan-Soo Chung

Byoung-Taek Choi

Hee-Chang Jeon

Gang-Sun Choi

Sunil Kumar Girthar

Yong-Rack Choi

Sung-Ho Hwang

A plant-soil battery includes a plant body, a soil layer in which the plant body is planted, an anode electrode disposed in the soil layer and including microorganisms that degrade glucose discharged from the plant body to generate electrons, and a cathode electrode disposed in the soil layer to receive the electrons. The plant-soil battery is capable of supplying energy for 24 hours a day, is harmless to the environment, can be easily moved and installed, and has an adjustable generating capacity.

Plant-soil battery

Disclosed is a method for purifying teicoplanin Acomprising: (i) a primary pre-purification step of purifying a filtrate of fermentation broth of a strain using a synthetic adsorbent; (ii) a secondary pre-purification step of purifying the primary pre-purification solution using a cation exchange resin having a high cross-linkage, a catalytic resin or a chelate resin; (iii) a final purification step of purifying the secondary pre-purification solution using a reversed phase resin; and (iv) a powder-forming step. According to the present invention, it is possible to obtain teicoplanin Awith a higher purity through a relatively simple process without using an excessive amount of an organic solvent.

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An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.

Method for manufacturing super bright light emitting diode of nanorod array having InGaN quantum well

Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Tae-Won Kang